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The Influence of the Interface Trap Densities on the Extraction of the Silicon Film and Front Oxide Thickness of SOI NMOS Devices at Low Temperatures

著者名:
掲載資料名:
Microelectronics technology and devices : SBMICRO 2002 : proceedings of the seventeenth international symposium
シリーズ名:
Electrochemical Society Proceedings Series
シリーズ巻号:
2002-8
発行年:
2002
開始ページ:
28
終了ページ:
34
総ページ数:
7
出版情報:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566773287 [1566773288]
言語:
英語
請求記号:
E23400/2002-8
資料種別:
国際会議録

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