Kinetics of AlxGa1-xAs Oxidation Layer by Capacitance- Voltage Technique*
- 著者名:
Dang, G. Luo, B. Mehandru, R. Ren, F. Hobson, W.S. Lopata, J. Tayahi, M Chu, S.N.G. Pearton, S.J. Chang, W. Shen, H. - 掲載資料名:
- State-of-the-art program on compound semiconductors XXXVI and wide bandgap semiconductors for photonic and electronic devices and sensors II : proceedings of the international symposia
- シリーズ名:
- Electrochemical Society Proceedings Series
- シリーズ巻号:
- 2002-3
- 発行年:
- 2002
- 開始ページ:
- 225
- 終了ページ:
- 231
- 総ページ数:
- 7
- 出版情報:
- Pennington, N.J.: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566773690 [1566773695]
- 言語:
- 英語
- 請求記号:
- E23400/2002-3
- 資料種別:
- 国際会議録
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4
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Effect of Annealing on GaAs:C, AlxGa1-xAs:C, and AlAs: Grown by Metalorganic Molecular Beam Epitaxy
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