Annealing Behavior of Ar Implanted GaN
- 著者名:
Luo, B. Johnson, J.W. Ren, F. Allums, K.K. Abernathy, C.R. Pearton, S.J. Dwivedi, R. Fogarty, TN Wilkins, R. Dabiran, A.M Wowchack, A.M. Polley, C.J. Chow, P.P. Baca, A.G. - 掲載資料名:
- State-of-the-art program on compound semiconductors XXXVI and wide bandgap semiconductors for photonic and electronic devices and sensors II : proceedings of the international symposia
- シリーズ名:
- Electrochemical Society Proceedings Series
- シリーズ巻号:
- 2002-3
- 発行年:
- 2002
- 開始ページ:
- 198
- 終了ページ:
- 206
- 総ページ数:
- 9
- 出版情報:
- Pennington, N.J.: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566773690 [1566773695]
- 言語:
- 英語
- 請求記号:
- E23400/2002-3
- 資料種別:
- 国際会議録
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6
国際会議録
Novel Oxides and Reliability for the Passivation of AlGaN/GaN High Electron Mobility Transistor
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