IMPACT OF STATE-OF-THE-ART Cz SUBSTRATES ON THE CURRENT-VOLTAGE CHARACTERSTiCS OF SHALLOW p-n JUNCTIONS

IMPACT OF STATE-OF-THE-ART Cz SUBSTRATES ON THE CURRENT-VOLTAGE CHARACTERSTiCS OF SHALLOW p-n JUNCTIONS

著者名:

Poyai, A.

掲載資料名:

Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2002-2

発行年:

2002

開始ページ:

694

終了ページ:

706

総ページ数:

13

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773744 [1566773741]

言語:

英語

請求記号:

E23400/2002-2

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014036
シリーズID:	PA00000028
会議名:	International Symposium on Silicon Materials Science and Technology
回次:	9th
会議開催地:	Philadelphia, PA, USA
会議開催年:	2002.05.13-2002.05.17

類似資料:

1 国際会議録 IMPACT OF STATE-OF-THE-ART Cz SUBSTRATES ON THE CURRENT-VOLTAGE CHARACTERSTICS OF SHALLOW p-n JUNCTIONS Poyai, A., Simoen, E., Claeys, C., Huber, A., Graef, D., Gaubas, E. Electrochemical Society	7 国際会議録 P-N Junction Diagnostics of the Electrical Epi-Layer Quality: A Feasibility Study Simoen, E., Poyai, A., Claeys, C., Czerwinski, A. Electrochemical Society
2 国際会議録 Lifetime and Leakage Current Studies in Shallow P-N Junctions Poyai, A., Simoen, E., Claeys, C., Rooyackers, R., Badenes, G., Gaubas, E. Electrochemical Society	8 国際会議録 New Method for Accurate Determination of the Electric Field Enhancement in Junctions - Theoretical Model and Applications to STI Diodes With High Fields Czerwinski, A., Simoen, E., Poyai, A., Claeys, C. Electrochemical Society
3 国際会議録 Lifetime and Leakage Current Studies in Shallow P-N Junctions Fabricated in a Deep High-Energy Boron Implanted P-Well Poyai,A., Simoen,E., Claeys,C., Rooyackers,R., Badenes,G., Gaubas,E. Electrochemical Society, SPIE-The International Society for Optical Engineering	9 国際会議録 Proton-irradiation effect on the electric-field enhancement of the generation lifetime in shallow P-N junction diodes Poyai, A., Simoen, E., Claeys, C., Hayama, K., Kobayashi, K., Ohyama, H. Electrochemical Society
4 国際会議録 Impact of the Generation Width on the Lifetime Extraction in Cz Siliconp-n Junction Diodes Czerwinski, A., Simoen, E., Poyai, A., Claeys, C. Electrochemical Society	10 国際会議録 OPTIMISED DIODE ASSESSMENT OF THE SURFACE AND BULK GENERATION/RECOMBINATION PROPERTIES OF SILICON SUBSTRATE Simoen, E., Poyai, A., Claeys, C., Czerwinski, A., Katcki, J. Electrochemical Society
5 国際会議録 The effect of substrate radiation-induced defects on the operation of deep submicron silicon technologies Simoen, E., Claeys, C., Poyai, A. Electrochemical Society	11 国際会議録 Potential and Pitfalls of the Diode Characterization Technique for ULSI Device Analysis Poyai, A., Simoen, E., Claeys, C. SPIE-The International Society for Optical Engineering
6 国際会議録 Impact of Thermal Budget on Junction Leakage in a 0.18 and 0.13 μm CMOS Technology Poyai, A., Simoen, E., Claeys, C., Rooyackers, R., Redolfi, A. Electrochemical Society	12 国際会議録 Impact of STI Width and Spacing on the Stress Generation in Deep Submicron CMOS Poyai, A., Rittaporn, I., Simoen, E., Claeys, C., Rooyackers, R. Electrochemical Society

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