FIRST PRINCIPLE CALCULATIONS FOR NITROGEN- VACANCY RELATED DEFECTS IN NITROGEN DOPED SILICON; STRUCTURE, ENERGETICS AND THERMAL STABILITY
- 著者名:
- 掲載資料名:
- Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology
- シリーズ名:
- Electrochemical Society Proceedings Series
- シリーズ巻号:
- 2002-2
- 発行年:
- 2002
- 開始ページ:
- 670
- 終了ページ:
- 681
- 総ページ数:
- 12
- 出版情報:
- Pennington, NJ: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566773744 [1566773741]
- 言語:
- 英語
- 請求記号:
- E23400/2002-2
- 資料種別:
- 国際会議録
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