COMPUTER SIMULATION FOR MORPHOLOGY, SIZE AND DENSITY OF OXIDE PRECIPITATES IN CZOCHRALSKI SILICON

COMPUTER SIMULATION FOR MORPHOLOGY, SIZE AND DENSITY OF OXIDE PRECIPITATES IN CZOCHRALSKI SILICON

著者名:

掲載資料名:

Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2002-2

発行年:

2002

開始ページ:

540

終了ページ:

553

総ページ数:

14

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773744 [1566773741]

言語:

英語

請求記号:

E23400/2002-2

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014036
シリーズID:	PA00000028
会議名:	International Symposium on Silicon Materials Science and Technology
回次:	9th
会議開催地:	Philadelphia, PA, USA
会議開催年:	2002.05.13-2002.05.17

類似資料:

1 国際会議録 COMPUTER SIMULATION FOR MORPHOLOGY, SIZE AND DENSITY OF OXIDE PRECIPITATES IN CZOCHRALSKI SILICON Sueoka, K., Akatsuka, M., Okui, M., Katahama, H. Electrochemical Society	7 国際会議録 Oxygen Precipitation Behavior and its Optimum Condition for Internal Gettenng and Mechanical Strength in Epitaxial and Polished Silicon Wafers * Sueoka, K., Akatsuka, M., Onno, T., Asayama, E., Koike, Y., Adachi, N., Sadamitsu, S., Katahama, H. Electrochemical Society
2 国際会議録 CALCULATION OF SIZE DISTRIBUTION OF VOID DEFECT IN CZOCHRALSKI SILICON Akatsuka, M., Okui, M., Umeno, S., Sueoka, K. Electrochemical Society	8 国際会議録 Oxygen Precipitation Behavior and its Optimum Condition for Internal Gettering and Mechanical Strength in Epitaxial and Polished Silicon Wafers Sueoka,K., Akatsuka,M., Onno,T., Asayama,E., Koike,Y., Adachi,N., Sadamitsu,S., Katahama,H. Electrochemical Society, SPIE-The International Society for Optical Engineering
3 国際会議録 CALCULATION OF SIZE DISTRIBUTION OF VOID DEFECT IN CZOCHRALSKI SILICON Akatsuka, M., Okui, M., Umeno, S., Sueoka, K. Electrochemical Society	9 国際会議録 Effect of Heavy Boron Doping on Oxygen Precipitation in Czochralski Silicon Substrates of Epitaxial Wafers Sucoka, K., Yonemura, M., Akatsuka, M., Katahama, H., Ono, T., Asayama, E. Electrochemical Society
4 国際会議録 CALCULATION OF SLIP LENGTH IN 300 mm SILICON WAFERS DURING THERMAL PROCESSES Akatsuka, M., Sueoka, K., Katahama, H., Adachi, N. Electrochemical Society	10 国際会議録 Generation of Oxidation Induced Stacking Faults in CZ Silicon Wafers Sueoka,K., Akatsuka,M., Nishihara,K., Yamamoto,T., Kobayashi,S. Trans Tech Publications
5 国際会議録 Morphology of Oxide Precipitates in Czochralski Silicon Crystals Sueoka,K., Ikeda,N., Yamamoto,T., Kobayashi,S. Trans Tech Publications	11 国際会議録 MORPHOLOGY CHANGE OF OXIDE PRECIPITATES IN CZ SILICON DURING TWO-STEP ANNEALING Sueoka, K., Ikeda, N., Yamamoto, T., Kobayashi, S. Electrochemical Society
6 国際会議録 EFFECT OF HEAVY BORON DOPING ON OXIDE PRECIPITATE GROWTH IN CZOCHRALSKI SILICON Ono, T., Asayama, E., Horie, H., Hourai, M., Sueoka, K., Tsuya, H., Rozgonyi, G.A. Electrochemical Society	12 国際会議録 Oxygen Precipitation in Lightly and Heavily Doped Czochralski Silicon K. Sueoka Electrochemical Society

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