DAMASCENE METAL GATE FOR 70 nm CMOS PROCESS | 東京工業大学附属図書館文献データベース

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DAMASCENE METAL GATE FOR 70 nm CMOS PROCESS

著者名:

さらに 8 件

掲載資料名:

Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2002-2

発行年:

2002

開始ページ:

793

終了ページ:

802

総ページ数:

10

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773744 [1566773741]

言語:

英語

請求記号:

E23400/2002-2

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014035
シリーズID:	PA00000028
会議名:	International Symposium on Silicon Materials Science and Technology
回次:	9th
会議開催地:	Philadelphia, PA, USA
会議開催年:	2002.05.13-2002.05.17

類似資料:

1 国際会議録 DAMASCENE METAL GATE FOR 70 nm CMOS PROCESS Guillaumot, B., Ducroquet, F., Ernst, T., Guegan, G., Galon, C., Renard, C., PrevitaIi, B., Rivoire, M., Nier, M.E., … Electrochemical Society	7 国際会議録 Impact of Metal Contamination of 7.0 nm Gate Oxides on Various Substrate Materials Saito, S., Hamada, K., Eaglesham, D. J., Shiramizu, Y., Benton, J. L., Kitajima, H., Jacobson, S. D. C., Poate, J. M. MRS - Materials Research Society
2 国際会議録 Fully Depleted Silicon-on-Insulator nMOSFETs with Tensile Strained High Carbon Content Sil-yCy Channels F. Ducroquet, J. Hartmann, C. Tabone, D. Lafond, C. Vizioz, T. P. Ernst, S. Deleonibus Electrochemical Society	8 国際会議録 Impact of Metal Contamination of 7.0 nm Gate Oxides on Various Substrate Materials Saito, S., Hamada, K., Eaglesham, D. J., Shiramizu, Y., Benton, J. L., Kitajima, H., Jacobson, S. D. C., Poate, J. M. MRS - Materials Research Society
3 国際会議録 Planar Bonded Double Gate MOS Transistors Down to LG = 10 nm (Invited paper) Vinet, M., Widiez, J., Lolivier, J., Poiroux, T., Biasse, B., Previtali, B., Dechamp, J., Deleonibus, S. Electrochemical Society	9 国際会議録 Advanced SOI MOSFETs: structures and device physics Invited Faynot, O., Vandooren, A., Ritzenthaler, R., Poiroux, T., Lolivier, J., Jahan, C., Barraud, S., Ernst, T., Andrieu, F., … Electrochemical Society
4 国際会議録 METAL GATES FOR ADVANCED CMOS TECHNOLOGIES KiTTL, J. A. 1, PAWLAK, M. A., LAUWERS, A., SCHRAM, T., POURTOIS, G., VELOSO, A., Yu, H., HOFFMANN, T., DEMEURISSE, C., … Electrochemical Society	10 国際会議録 Challenges in Dual Workfunction Metal Gate CMOS Integration B. Lee, S. Song, R. Jammy, M. Hussain Electrochemical Society
5 国際会議録 Analysis of PD AOI pMOSFET Device Performance Enhancement due to Direct-Tunneling Current in the Partial n+ Poly Gate G. Guegan, J. Pretet, R. Gwoziecki, O. Gonnard, G. Gouget, P. Touret, C. Raynaud, S. Deleonibus Electrochemical Society	11 国際会議録 28 Self-aligned PtSi Fully Silicided (FUST) Metal Gates for 45 nm CMOS Applications van Dal, M.J.H., Lauwers, A., Cunniffe, J., Verbeeck, R., Vrancken, C., Demeurisse, C., Dao, T., Tamminga, Y., Veloso, … Electrochemical Society
6 国際会議録 Study of Metal Gate Work Function Modulation Using Plasma and SiH4 Treated TiN Thin Films Fillot, F., Maitrejean, S., Farjot, T., Guillaumot, B., Chenevier, B., Passemard, G. Materials Research Society	12 国際会議録 Advanced Metal Gate FinFET CMOS TEchnology Y. Liu, T. Matsukawa, K. Endo, M. Masahara, S. Ouchi Electrochemical Society

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