FIRST PRINCIPLE CALCULATIONS FOR NITROGEN- VACANCY RELATED DEFECTS IN NITROGEN DOPED SILICON; STRUCTURE, ENERGETICS AND THERMAL STABILITY

FIRST PRINCIPLE CALCULATIONS FOR NITROGEN- VACANCY RELATED DEFECTS IN NITROGEN DOPED SILICON; STRUCTURE, ENERGETICS AND THERMAL STABILITY

著者名:

掲載資料名:

Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2002-2

発行年:

2002

開始ページ:

670

終了ページ:

681

総ページ数:

12

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773744 [1566773741]

言語:

英語

請求記号:

E23400/2002-2

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014035
シリーズID:	PA00000028
会議名:	International Symposium on Silicon Materials Science and Technology
回次:	9th
会議開催地:	Philadelphia, PA, USA
会議開催年:	2002.05.13-2002.05.17

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