RARE EARTH METAL OXIDES FOR HIGH-K GATE INSULATOR | 東京工業大学附属図書館文献データベース

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RARE EARTH METAL OXIDES FOR HIGH-K GATE INSULATOR

著者名:

さらに 6 件

掲載資料名:

Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2002-2

発行年:

2002

開始ページ:

376

終了ページ:

387

総ページ数:

12

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773744 [1566773741]

言語:

英語

請求記号:

E23400/2002-2

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014035
シリーズID:	PA00000028
会議名:	International Symposium on Silicon Materials Science and Technology
回次:	9th
会議開催地:	Philadelphia, PA, USA
会議開催年:	2002.05.13-2002.05.17

類似資料:

1 国際会議録 RARE EARTH METAL OXIDES FOR HIGH-K GATE INSULATOR Ohmi, S., Akama, S., Kikuchi, A., Kashiwagi, I., Ohshima, C., Taguchi, J., Yamamoto, H., Sato, K., Takeda, M., Ishiwara, … Electrochemical Society	7 国際会議録 Electrical Characteristics Improvement of DY₂O₃ Thin Films by In-Situ Vacuum Anneal H. Yamamoto, J. Taguchi, S. Ohmi, H. Iwai Electrochemical Society
2 国際会議録 High Dielectric Constant Gate Insulator Technology using Rare Earth Oxides H. Iwai, S. Ohmi, S. Akama, C. Ohshima, I. Kashiwagi, A. Kikuchi, J. Taguchi, H. Yamamoto, I. Ueda, A. Kuriyama, J. … Electrochemical Society	8 国際会議録 A Study of Aluminum Gate La2O3 nMISFET with Post Metallization Anneal Ng, J. -A., Ohmi, S.-I., Tsutsui, K., Iwai, H. Electrochemical Society
3 国際会議録 Enhanced Short-Channel Effects of Sub-50 nm Gate Length MOSFETs with High-k Gate Insulator Films Fujimura, R., Takeda, M., Sato, K., Ohmi, S.-I., Ishiwara, H., Iwai, H. Electrochemical Society	9 国際会議録 Oxidative Methylation of Hydrocarbons with Methane over Rare-Earth Metal Oxide Catalysts. Sodesawa, T., Sato, S., Nozaki, F. Elsevier
4 国際会議録 Characteristics of High-K Gd₂O₃ Films Deposited on Different Orientation of Si Substrate I. Kashiwagi, C. Ohshima, S. Ohmi, H. Iwai Electrochemical Society	10 国際会議録 Etching of High-k Gate Dielectrics and Gate Metal Candidates Han, S.K, Kim, I., Zhong, H, Heuss, G.P., Lee, J.H, Wicairsana, D., Maria, J.P., Misra, V., Osburn, C.M. Electrochemical Society
5 国際会議録 Stability of High-K Thin Films for Wet Process A. Kikuchi, S. Akama, S. Ohmi, H. Iwai Electrochemical Society	11 国際会議録 Change of Interlayer Exchange Coupling between the Adjacent Magnetic Transition Metal Layers across a Rare-Earth Metal Layer by Hydrogenation Endo, Y., Sato, T., Kaneko, T., Kawamura, Y., Yamamoto, M. Trans Tech Publications
6 国際会議録 Rare-Earth Metal Scandate High-k Layers C. Zhao, T. Heeg, M. Wagner, J. Schubert, S. Witters, B. Brijs, H. Bender, O. Richard, V. Afanas'ev, M. Houssa, M. … Electrochemical Society	12 国際会議録 Flatband Voltage Shift Depending on SiO2/SiC Interface Charges in 4H-SiC MOS Capacitors with AlON/SiO₂ Stacked Gate Dielectrics T. Hosoi, S. Azumo, K. Yamamoto, M. Aketa, Y. Kashiwagi Trans Tech Publications

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