IMPACT OF NITROGEN DOPING IN SILICON ONTO GATE OXIDE INTEGRITY

IMPACT OF NITROGEN DOPING IN SILICON ONTO GATE OXIDE INTEGRITY

著者名:

Huber, A.

掲載資料名:

Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2002-2

発行年:

2002

開始ページ:

280

終了ページ:

286

総ページ数:

7

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773744 [1566773741]

言語:

英語

請求記号:

E23400/2002-2

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014035
シリーズID:	PA00000028
会議名:	International Symposium on Silicon Materials Science and Technology
回次:	9th
会議開催地:	Philadelphia, PA, USA
会議開催年:	2002.05.13-2002.05.17

類似資料:

1 国際会議録 IMPACT OF NITROGEN DOPING IN SILICON ONTO GATE OXIDE INTEGRITY Huber, A., Kapser, M., Grabmeier, J., Lambert, U., Ammon, W.v., Pech, R. Electrochemical Society	7 国際会議録 MODELLING OF CRYSTAL ORIGINATED PARTICLES AND THEIR IMPACT ON GATE OXIDE INTEGRITY Bearda, T., Mertens, P.W., Woerlee, P.H., Wallinga, H., Sebmolke, R., Heyns, M. Electrochemical Society
2 国際会議録 Formation and Control of Defects in Nitrogen Doped Silicon Crystals （Invited Paper） Huber, A., Lambert, U., Hackl, W., Ammon, W.v. Electrochemical Society	8 国際会議録 MODELLING OF CRYSTAL ORIGINATED PARTICLES AND THEIR IMPACT ON GATE OXIDE INTEGRITY Bearda, T., Mertens, P.W., Woerlee, P.H., Wallinga, H., Sebmolke, R., Heyns, M. Electrochemical Society
3 国際会議録 The Impact of the Dwell Time Above 900℃ During Crystal Growth on the Gate Oxide Integrity of Silicon Wafers Dornberger, E., von Ammon, W., Graef, D., Lambert, U., Miller, A., Oelkrug, H., Ehlert, A. Electrochemical Society	9 国際会議録 On the Influence of Nitrogen and Carbon on the Formation of Dislocations in Heavily Doped Silicon Wafers Winkler, R., Krautbauer, R., Pech, R. Electrochemical Society
4 国際会議録 GATE OXIDE RELATED BULK PROPERTIES OF OXYGEN DOPED FLOATING ZONE AND CZOCHRALSKI SILICON Ammon, W.v., Ehlert, A., Lambert, U., Graef, D., Brohl, M., Wagner, P. Electrochemical Society	10 国際会議録 Organic Contamination of Silicon Wafer in Clean Room Air and Its Impact to Gate Oxide Integrity Imafuku, D., Mizubayashi, W., Miyazaki, S., Hirose, M., Wakayama, Y., Kobayashi, S. MRS - Materials Research Society
5 国際会議録 Reliability of Gate Oxides on Silicon Substrates with 5-10 nm Oxide Thickness Huber, A., Grabmeler, J., Lambert, U., Wahlich, R. Electrochemical Society	11 国際会議録 Organic Contamination of Silicon Wafer in Clean Room Air and Its Impact to Gate Oxide Integrity Imafuku, D., Mizubayashi, W., Miyazaki, S., Hirose, M., Wakayama, Y., Kobayashi, S. MRS - Materials Research Society
6 国際会議録 The Impact of Crystal Quality by Delineation of COP and the Impact on the Silicon Wafer Surface Graef, D., Suhren, M., Lambert, U., Schmolke, R., Ehiert, A., Ammon, W.v., Wagner, P. Electrochemical Society	12 国際会議録 Grown-in oxide precipitate nuclei in Czochralski silicon substrates and their role in device processing Kissinger, G., Grabolla, T., Morgenstern, G., Richter, H., Graef, D., Vanhellemont, J., Lambert, U., von Ammon, W. Electrochemical Society

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