Scalable Potential and Volume Production in ELTRAN (R); SOI-Epi WafersTM

Scalable Potential and Volume Production in ELTRAN (R); SOI-Epi WafersTM

著者名:

掲載資料名:

Semiconductor wafer bonding : science, technology, and applications : proceedings of the international symposia

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2001-27

発行年:

2001

開始ページ:

197

終了ページ:

204

総ページ数:

8

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773607 [1566773601]

言語:

英語

請求記号:

E23400/200127

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014031
シリーズID:	PA00000028
会議名:	International Symposium on Semiconductor Wafer Bonding ; Fall Meeting of the Electrochemical Society
回次:	6th ; 2001
会議開催地:	San Francisco, CA, USA
会議開催年:	2001.09.00

類似資料:

1 国際会議録 ELTRAN (SOI-Epi Wafer) Technology Yonehara, T., Sakaguchi, K. Kluwer Academic Publishers	7 国際会議録 Splittability in Double Porous Si Layers for ELTRAN Sakaguchi, K., Tsuboi, T., Yanagita, K., Okabe, T., Takahashi, K., Sato, N. Electrochemical Society
2 国際会議録 ELTRAN(R); SOI-Epi WaferTM by Epitaxial Layer Transfer from Porous Si Yonehara, T., Sakaguchi, K. Electrochemical Society	8 国際会議録 Epiaxial Layer Transfer by Bond and Etch-Back of Porous SI Yonehara, T., Sakaguchi, K., Sato, N. Electrochemical Society
3 国際会議録 Volume Production in ELTRANr SOI-Epi WafersTM Isaj, H., Nakayama, J., Yonehara, T. Electrochemical Society	9 国際会議録 ELTRAN Epitaxial Layer Thansfer (Invited) Sakaguchi, Tyonehara; K, Sato, N Electrochemical Society
4 国際会議録 ELTRAN by Splitting Porous Si Layers Sakaguchi, K, Yanagita, Y, Kurisu, H, Suzuki, H, Obmi, K, Yonehara, T Electrochemical Society	10 国際会議録 Mechanism of Pore-Enlargement in Double Porous Si Layers Sakaguchi, K., Kurisu, H., Ohmi, K., Yonehara, T. Electrochemical Society
5 国際会議録 CVD-Epitaxial Growth on Porous Si for ELTRAN SOl-Epi Wafers Sato, N., Ishii, S., Yonehara, T. Electrochemical Society	11 国際会議録 Detection of SOI Fatal Defects by Cu Decoration in Conjunction with HF Immersion Notsu, K., Honma, N., Yonehara, T. Electrochemical Society
6 国際会議録 EPITAXIAL GROWTH ON POROUS Si FOR A NEW BOND AND ETCH-BACK SOI Sato, N., Sakaguchi, K., Yamagata, K., Fujiyama, Y., Yonehara, T. Electrochemical Society	12 国際会議録 Lifetime Measurements in SOI and EPI Structures Pavelka,T., Batari,Z. SPIE - The International Society for Optical Engineering

1

2

3

4

5

6

7

8

9

10

11

12