The Eletrical characteristics of W/WNx/poly Si1-xGex and the MOSCAP structures with W/WNx/poly Si1-xGex gates stack
- 著者名:
Kang, S.-K Kim, J.J. Kang, H.B. Yang, C.W. Ahn, T.H. Yeo, I.S. Lee, T.W. Lee, Y.H. Ko, D.-H. - 掲載資料名:
- Semiconductor technology (ISTC 2001) : proceedings of the 1st International Conference on Semiconductor Technology
- シリーズ名:
- Electrochemical Society Proceedings Series
- シリーズ巻号:
- 2001-17
- 発行年:
- 2001
- 開始ページ:
- 276
- 終了ページ:
- 283
- 総ページ数:
- 8
- 出版情報:
- Pennington, N.J.: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566773508 [1566773504]
- 言語:
- 英語
- 請求記号:
- E23400/200117
- 資料種別:
- 国際会議録
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