Blank Cover Image

The Eletrical characteristics of W/WNx/poly Si1-xGex and the MOSCAP structures with W/WNx/poly Si1-xGex gates stack

著者名:
Kang, S.-K
Kim, J.J.
Kang, H.B.
Yang, C.W.
Ahn, T.H.
Yeo, I.S.
Lee, T.W.
Lee, Y.H.
Ko, D.-H.
さらに 4 件
掲載資料名:
Semiconductor technology (ISTC 2001) : proceedings of the 1st International Conference on Semiconductor Technology
シリーズ名:
Electrochemical Society Proceedings Series
シリーズ巻号:
2001-17
発行年:
2001
開始ページ:
276
終了ページ:
283
総ページ数:
8
出版情報:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566773508 [1566773504]
言語:
英語
請求記号:
E23400/200117
資料種別:
国際会議録

類似資料:

1 国際会議録 The Electrical Characteristics of the MOSCAP Structures with W/WNx/poly Si1-xGex Gates Stack

Kang, S.-K., Kim, J.J., Ko, D.-H., Ahn, T.H., Yeo, I.S., Lee, T.W., Lee, Y.H.

Materials Research Society
7 国際会議録 Effect of the Seed Polarity for High Quality 4H-SiC Crystal Grown on 6H-SiC Seed by PVT Method

I.G. Yeo, T.W. Lee, J.H. Park, W.S. Yang, H.B. Ryu

Trans Tech Publications
2 国際会議録 N Type Dopant Activation behaviors of poly Si1-xGex with Ge contents and activation temperature

Kang, S.-K, Kim, J.J., Kang, H.B., Yang, C.W., Ahn, T.H., Yeo, I.S., Lee, T.W., Lee, Y.H., Ko, D.-H.

Electrochemical Society
8 国際会議録 The Effect of Process Parameters on 4H-SiC Single Crystal Grown by a PVT Method

I.G. Yeo, T.W. Lee, J.H. Park, W.S. Yang, H.B. Ryu

Trans Tech Publications
3 国際会議録 The Physical and Electrical Properties of Poly Sil-xGex as a Gate Electrode Material

Kang, S.-K., Ko, D.-H., Ahn, T.H., Yeo, I.S., Lee, K.C., Lee, T.W., Lee, Y.H.

Electrochemical Society
9 国際会議録 A Novel Method for Selective Oxidation of W/WNx/Poly Gate Stack Using RTP ISSG Techniques

Joo, H.S., Ng, B., Lopes, D., Miner, G.

Electrochemical Society
4 国際会議録 The Physical and Electrical Properties of Polycrystalline Si1-xGex as a Gate Electrode Material for ULSI CMOS Structures

Kang, Sung-Kwan, Ko, Dae-Hong, Ahn, Tae-Hang, Joo, Moon-Sik, Yeo, In-Seok, Whoang, Sung-Jin, Yang, Doo-Young, Whang, …

Materials Research Society
10 国際会議録 An AlGaN/GaN HEMT with WNx T-Gate for High Temperature Application

Huang, Y. L., Fang, C. V., Chang, E. Y., Lee, C. S., Chen, S. H., Lee, H. M., Lien, Y. C., Lee, C. T.

Electrochemical Society
5 国際会議録 Integration Issues with High k Gate Stacks*

Osburn, C.M., Han, S.K., Kim, I., Campbell, S.A., Garfunkel, E., Gustafson, T., Hauser, J., King, T.-J., Liu, Q., …

Electrochemical Society
11 国際会議録 Challenge for effective OCV control in 90-nm logic gate using ArF lithography

Kang, H.-J., Lee, S.-W., Lee, D.-Y., Yeo, G.-S., Lee, J.-H., Cho, H.-K., Han, W.-S., Moon, J.-T.

SPIE-The International Society for Optical Engineering
6 国際会議録 (4.17) 8:13 - 8:16 PM - Growth of Relaxed Si1_xGex by Using Oxidation of Si1_xGex

Min, B. G., Jeon, K. S., Pae, Y. H., Ko, D.-H., Cho, M.-H., Lee, T.-W.(Yonsei Univ.)

Electrochemical Society
12 国際会議録 Improvement of structural stability and IR-detecting characteristics of microbolometer

Kang,H.K., Ha,W.H., Park,C.W., Kim,B.K., Moon,S.W., Kim,T.H.

SPIE-The International Society for Optical Engineering
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12