Modeling of SiGe Epitaxial Growth in a Wide Range of Growth Conditions

Modeling of SiGe Epitaxial Growth in a Wide Range of Growth Conditions

著者名:

掲載資料名:

Fundamental gas-phase and surface chemistry of vapor-phase deposition II and process control, diagnostics, and modeling in semiconductor manufacturing IV : proceedings of the international symposium

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2001-13

発行年:

2001

開始ページ:

229

終了ページ:

236

総ページ数:

8

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773195 [1566773199]

言語:

英語

請求記号:

E23400/200113

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014016
シリーズID:	PA00000028
会議名:	Fundamental Gas-Phase and Surface Chemistry of Vaper-Phase Materials Synthesis ; Symposium on Process Control, Diagnostics and Modeling in Semiconductor Manufacturing
回次:	2nd ; 4th
会議開催地:	Washington, D.C., USA
会議開催年:	2001.00.00

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