High Quality Ultra Thin HfO 2 Gate Stack Prepared by In-Situ RT-MOCVD Process

High Quality Ultra Thin HfO 2 Gate Stack Prepared by In-Situ RT-MOCVD Process

著者名:

Lee, S.J.

掲載資料名:

Rapid thermal and other short-time processing technologies II : proceedings of the international symposium

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2001-9

発行年:

2001

開始ページ:

231

終了ページ:

238

総ページ数:

8

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773157 [1566773156]

言語:

英語

請求記号:

E23400/2001-9

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014012
シリーズID:	PA00000028
会議名:	International Symposium on Rapid Thermal and Other Short-Time Processing Technologies ; Meeting of the Electrochemical Society
回次:	2nd ; 199th
会議開催地:	Washington D.C., USA
会議開催年:	2001.03.24-2001.03.29

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