The Effect of Deposition Temperature on Grain Structure and Electrical Properties of Amorphous and Polycrystallinc Silicon fabricated by Rapid Thermal Chemical Vapor Deposition for the Application of CMOS Gate Electrodes

The Effect of Deposition Temperature on Grain Structure and Electrical Properties of Amorphous and Polycrystallinc Silicon fabricated by Rapid Thermal Chemical Vapor Deposition for the Application of CMOS Gate Electrodes

著者名:

掲載資料名:

Rapid thermal and other short-time processing technologies II : proceedings of the international symposium

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2001-9

発行年:

2001

開始ページ:

105

終了ページ:

112

総ページ数:

8

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773157 [1566773156]

言語:

英語

請求記号:

E23400/2001-9

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014012
シリーズID:	PA00000028
会議名:	International Symposium on Rapid Thermal and Other Short-Time Processing Technologies ; Meeting of the Electrochemical Society
回次:	2nd ; 199th
会議開催地:	Washington D.C., USA
会議開催年:	2001.03.24-2001.03.29

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