Fully Depleted SIMOX SOI Process Technology for Low Power Digital and RF Device

Fully Depleted SIMOX SOI Process Technology for Low Power Digital and RF Device

著者名:

Itoh, M.

掲載資料名:

Silicon-on-Insulator Technology and Devices X : proceedings of the tenth International Symposium

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2001-3

発行年:

2001

開始ページ:

331

終了ページ:

336

総ページ数:

6

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773096 [1566773091]

言語:

英語

請求記号:

E23400/2001-3

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014007
シリーズID:	PA00000028
会議名:	International Symposium on Silicon-on-Insulator Technology and Devices ; Meeting of the Electrochemical Society
回次:	10th : 199th
会議開催地:	Washington D.C., USA
会議開催年:	2001.03.25-2001.03.29

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2 国際会議録 Fully Depleted SOI Process and Device Technology for Digital and RF Applications* Ichikawa, F., Nagatomo, V., Katakura, V., Itoh, S., Matsuhashi, H., Hirashita, N., Baba, S. Electrochemical Society	8 国際会議録 Quasi-three-dimensional device simulation of fully depleted MOSFET/SOI focused on surface roughness Nakao, M., likawa, H., Izumi, K. Electrochemical Society
3 国際会議録 Hot carrier degradation of fully depleted SIMOX MOSFETs Sinha, S P, Ii, F D, loonnou, D E, Jenkins, W C, Hughes, H L, Lin, M S Electrochemical Society	9 国際会議録 Process-induced threshold voltage fluctuations on SOI fully depleted technology Potavin,O., Ahaitouf,A. SPIE-The International Society for Optical Engineering
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