Analysis of Non-Stationary Transport and Quantum Effects in Realistic 0.1 μm Partially-Depleted SOI Technology

Analysis of Non-Stationary Transport and Quantum Effects in Realistic 0.1 μm Partially-Depleted SOI Technology

著者名:

掲載資料名:

Silicon-on-Insulator Technology and Devices X : proceedings of the tenth International Symposium

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2001-3

発行年:

2001

開始ページ:

199

終了ページ:

204

総ページ数:

6

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773096 [1566773091]

言語:

英語

請求記号:

E23400/2001-3

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014007
シリーズID:	PA00000028
会議名:	International Symposium on Silicon-on-Insulator Technology and Devices ; Meeting of the Electrochemical Society
回次:	10th : 199th
会議開催地:	Washington D.C., USA
会議開催年:	2001.03.25-2001.03.29

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