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A Simulation Study of Partially Depleted SOT MOSFETs

著者名:
掲載資料名:
Silicon-on-Insulator Technology and Devices X : proceedings of the tenth International Symposium
シリーズ名:
Electrochemical Society Proceedings Series
シリーズ巻号:
2001-3
発行年:
2001
開始ページ:
181
終了ページ:
186
総ページ数:
6
出版情報:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566773096 [1566773091]
言語:
英語
請求記号:
E23400/2001-3
資料種別:
国際会議録

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