Relaxed SiGe On Insulator Fabricated via Wafer Bonding and Layer Transfer: Etch-back and Smart-cut Alternatives | 東京工業大学附属図書館文献データベース

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Relaxed SiGe On Insulator Fabricated via Wafer Bonding and Layer Transfer: Etch-back and Smart-cut Alternatives

著者名:

Fitzgerald, E.A.

Antoniadis, D.A.

さらに 5 件

掲載資料名:

Silicon-on-Insulator Technology and Devices X : proceedings of the tenth International Symposium

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2001-3

発行年:

2001

開始ページ:

27

終了ページ:

32

総ページ数:

6

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773096 [1566773091]

言語:

英語

請求記号:

E23400/2001-3

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014007
シリーズID:	PA00000028
会議名:	International Symposium on Silicon-on-Insulator Technology and Devices ; Meeting of the Electrochemical Society
回次:	10th : 199th
会議開催地:	Washington D.C., USA
会議開催年:	2001.03.25-2001.03.29

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2 国際会議録 (11.3) 4:00 - 4:20 PM - Strained Silicon on Silicon by Wafer Bonding and Layer Transfer from Relaxed SiGe Buffer Isaacson, D. M., Taraschi, G., Pitera, A. J., Ariel, N., Fitzgerald, E. A. (MIT) Electrochemical Society	8 国際会議録 Etch Selectivity of Novel Epitaxial Layers for Bulk Micromachining Borenstein, J.T., Gerrish, N.D., Currie, M.T., Fitzgerald, E.A. Materials Research Society
3 国際会議録 39 MOSFET channel engineering using strained Si, SiGe and Ge channels Fitzgerald, E.A., Lee, M.L., Leitz, C.W., Antoniadis, D.A. Electrochemical Society	9 国際会議録 Growth and Properties of AlGaInP Resonant Cavity Light Emitting Diodes (RCLEDs) on Ge/SiGe/Si Substrates Kwon, O., Boeckl, J., Lee, M.L., Pitera, A.J., Fitzgerald, E.A., Ringel, S.A. Materials Research Society
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