Study of Radiation Induced Resistance Mechanisms in GaAs MESFET and TLM Structures
- 著者名:
- 掲載資料名:
- III-Nitride Based Semiconductor Electronics and Optical Devices and thirty-fourth State-of-the-Art-Program on Compound Semiconductors (SOTAPOCS XXXIV) : proceedings of the International Symposia
- シリーズ名:
- Electrochemical Society Proceedings Series
- シリーズ巻号:
- 2001-1
- 発行年:
- 2001
- 開始ページ:
- 250
- 終了ページ:
- 257
- 総ページ数:
- 8
- 出版情報:
- Pennington, N.J.: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566773072 [1566773075]
- 言語:
- 英語
- 請求記号:
- E23400/2001-1
- 資料種別:
- 国際会議録
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12
国際会議録
Electrical Characterization of GaN Metal Oxide Semiconductor Diode Using Sc2O3 as the Gate Oxide
Materials Research Society |