Electroluminescence Characterization of Base Layers with In and N Incorporation in InGaP/InGaAsN HBTs *

Electroluminescence Characterization of Base Layers with In and N Incorporation in InGaP/InGaAsN HBTs *

著者名:

Fitch, R.

掲載資料名:

III-Nitride Based Semiconductor Electronics and Optical Devices and thirty-fourth State-of-the-Art-Program on Compound Semiconductors (SOTAPOCS XXXIV) : proceedings of the International Symposia

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2001-1

発行年:

2001

開始ページ:

224

終了ページ:

231

総ページ数:

8

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773072 [1566773075]

言語:

英語

請求記号:

E23400/2001-1

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014005
シリーズID:	PA00000028
会議名:	Symposium on III-Nitride Based Semiconductor Electronic and Optical Devices ; State-of-the-Art Program on Compound Semiconductors - SOTAPOCS ; Meeting of the Electrochemical Society
回次:	3rd ; 34th ; 199th
会議開催地:	Washington, D.C., USA
会議開催年:	2001.03.25-2001.03.30

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