The Mechanism of Photoenhanced Wet Etching of GaN

The Mechanism of Photoenhanced Wet Etching of GaN

著者名:

掲載資料名:

III-Nitride Based Semiconductor Electronics and Optical Devices and thirty-fourth State-of-the-Art-Program on Compound Semiconductors (SOTAPOCS XXXIV) : proceedings of the International Symposia

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2001-1

発行年:

2001

開始ページ:

193

終了ページ:

203

総ページ数:

11

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773072 [1566773075]

言語:

英語

請求記号:

E23400/2001-1

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014005
シリーズID:	PA00000028
会議名:	Symposium on III-Nitride Based Semiconductor Electronic and Optical Devices ; State-of-the-Art Program on Compound Semiconductors - SOTAPOCS ; Meeting of the Electrochemical Society
回次:	3rd ; 34th ; 199th
会議開催地:	Washington, D.C., USA
会議開催年:	2001.03.25-2001.03.30

類似資料:

1 国際会議録 Mg Surface Treatment for Optimizing Contact and Bulk Properties of p-type GaN Grown by Ammonia- Molecular-Beam Epitaxy Tang, H., Bardwell, J.A., Webb, J.B., Rolfe, S., Moisa, S., Sproule, I., Raymond, S. Electrochemical Society	7 国際会議録 AlGaN/GaN Transistors and Circuits J. Bardwell, T. Lester, H. Tang, B. Surridge, A. Harrison Electrochemical Society
2 国際会議録 Laser polishing of GaN Dubowski,J.J., Moisa,S., Komorowski,B., Tang,H., Webb,J.B. SPIE-The International Society for Optical Engineering	8 国際会議録 AlGaN/GaN HEMTs Fabricated on Selectively Grown Mesas on Si(111) J. Bardwell, S. Haffouz, H. Tang, A. Kochtane, T. Lester Electrochemical Society
3 国際会議録 The Ammonia- MBE Approach for High Electron Mobility in GaN Epilayers And AlGaN/GaN HFET * Tang, H., Webb, J.B., Bardwell, J.A. Electrochemical Society	9 国際会議録 X-Ray and Electrical Characterization of Optimized Ti/Al/Ti/Au Ohmic Contacts for AlGaN/GaN HEMTs J. A. Bardwell, S. Haffouz, H. Tang, R. Wang Electrochemical Society
4 国際会議録 Characterization of AlGaN/GaN HEMT Devices Grown by MBE MacElwee, T. W., Bardwell, J. A., Tang, H., Webb, J. B. Trans Tech Publications	10 国際会議録 Simple wet etching of GaN Parish, G., Scali, P.A., Spaargaren, S.M.R., Nener, B.D. SPIE-The International Society for Optical Engineering
5 国際会議録 AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors (MOSHFETs) With the Delta-Doped Barrier Layer Fan, Z.Y., Li, J., Lin, J.Y., Jiang, H.X., Liu, Y., Bardwell, J.A., Webb, J.B., Tang, H. Materials Research Society	11 国際会議録 The Effect of Surface Cleaning on Current Collapse in AlGaN/GaN HEMTs J. Bardwell, S. Haffouz, R. McKinnon, C. Storey, H. Tang, G. Sproule, D. Roth, R. Wang Electrochemical Society
6 国際会議録 Highly Selective Photoenhanced Wet Etching of GaN for Defect Investigation and Device Fabrication Visconti, P., Reshchikov, M.A., Jones, K.M., Yun, F., Wang, D. F., Cingolani, R., Morkoc, H., Litton, C. W., Molnar, R. … Materials Research Society	12 国際会議録 AIGaN Schottky Characteristics After Hybrid Photoenhanced Wet and Inductively Coupled Plasma Etching Huang, W.J., Joey Fang, C.V., Wong, J.S., Chang, E.Y., Feng, M.S. Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12