Scanning Probe Studies of Defect Dominated Electronic Transport in GaN *

Scanning Probe Studies of Defect Dominated Electronic Transport in GaN *

著者名:

Hsu, J.W.P.

掲載資料名:

III-Nitride Based Semiconductor Electronics and Optical Devices and thirty-fourth State-of-the-Art-Program on Compound Semiconductors (SOTAPOCS XXXIV) : proceedings of the International Symposia

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2001-1

発行年:

2001

開始ページ:

37

終了ページ:

50

総ページ数:

14

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773072 [1566773075]

言語:

英語

請求記号:

E23400/2001-1

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014005
シリーズID:	PA00000028
会議名:	Symposium on III-Nitride Based Semiconductor Electronic and Optical Devices ; State-of-the-Art Program on Compound Semiconductors - SOTAPOCS ; Meeting of the Electrochemical Society
回次:	3rd ; 34th ; 199th
会議開催地:	Washington, D.C., USA
会議開催年:	2001.03.25-2001.03.30

類似資料:

1 国際会議録 MATERIAL PROPERTIES OF GaAs-ON-Si AND FABRICATION OF DIGITAL INTEGRATED CIRCUITS Chand, N., Ren, F., Chu, S.N.G., Sergent, A.M., Boone, T., Lang, D.V. Materials Research Society	7 国際会議録 Defect formation and electronic transport at AlGaN/GaN interfaces Hsu,L., Walukiewicz,W., Haller,E.E. Trans Tech Publications
2 国際会議録 Charge trapping on defects in AlGaN/GaN field effect transistors O. Mitrofanov, M. J. Manfra SPIE - The International Society of Optical Engineering	8 国際会議録 Single-Crystal Fine-Positioning Devices for Scanned-Probe Microscopies Kleiman, R. N. MRS - Materials Research Society
3 国際会議録 High quality UV AlGaN/AlGaN distributed Bragg reflectors and microcavities O. Mitrofanov, S. Schmult, M. J. Manfra, T. Siegrist, N. G. Weimann, A. M. Sergent, R. J. Molnar SPIE - The International Society of Optical Engineering	9 国際会議録 GaN/Gd2O3/GaN Single Crystal Heterostructure* Hong, M, Kwo, J., Chu, S.N.G., Mannaerts, J.P., Dabbahg, G., Kortan, A.R., Ng, H.M, Cho, A.Y., Anseim, K.A., Lee, C.M, … Electrochemical Society
4 国際会議録 *Temperature Effect of Metal contacts on GaN Ren, F., Chu, S.N.G., Lothian, J.R., Pearton, S.J., Abernathy, C.R., Baca, A.G., Han, J., Schurman, M.J., Hong, M., Cao, … Electrochemical Society	10 国際会議録 Low Dit Dielectric/GaN MOS Systems Hong, M., Ng, H.M., Kwo, J., Kortan, A.R., Baillargeon, J.N., Chu, S.N.G., Mannaerts, J.P., Cho, A.Y., Ren, F., … Electrochemical Society
5 国際会議録 Ferromagnetic and Structural Properties of Mn-Implanted p-GaN Theodoropoulou, N., Hebard, A.F., Overberg, M.E., Abernathy, C.R., Pearton, S.J., Chu, S.N.G., Wilson, R.G. Materials Research Society	11 国際会議録 The Intercation Among Defects During High Temperature Annealing of High Purity SIC Ougazzaden, A., Peticolas, L., Chu, S.N.G. Electrochemical Society
6 国際会議録 ELECTICAL CHARACTERIZATION OF DEFECTS IN GaAs GROWN ON Si BY MBE Chand, N., Fischer, R., Sergent, A. M., Lang, D. V., Cho, A. Y. Materials Research Society	12 国際会議録 GaN Metal Oxide Semiconductor Field Effect Transistors Ren, F., Pearton, S.J., Abernathy, C.R., Baca, A.G., Cheng, P., Han, J., Shul, R.J., Chu, S.N.G., Hong, M., Lothian, … Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12