ELTRAN(R); SOI-Epi WaferTM by Epitaxial Layer Transfer from Porous Si

ELTRAN(R); SOI-Epi WaferTM by Epitaxial Layer Transfer from Porous Si

著者名:

掲載資料名:

Pits and Pores : formation, properties, and significance for advanced materials : proceedings of the International Symposium

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2000-25

発行年:

2000

開始ページ:

313

終了ページ:

317

総ページ数:

5

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772921 [1566772923]

言語:

英語

請求記号:

E23400/200025

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013994
シリーズID:	PA00000028
会議名:	International Symposium on Pits and Pores ; Meeting of the Electrochemical Society
回次:	2nd ; 198th
会議開催地:	Phoenix, AZ, USA
会議開催年:	2000.10.22-2000.10.27

類似資料:

1 国際会議録 ELTRAN (SOI-Epi Wafer) Technology Yonehara, T., Sakaguchi, K. Kluwer Academic Publishers	7 国際会議録 Splittability in Double Porous Si Layers for ELTRAN Sakaguchi, K., Tsuboi, T., Yanagita, K., Okabe, T., Takahashi, K., Sato, N. Electrochemical Society
2 国際会議録 Scalable Potential and Volume Production in ELTRAN (R); SOI-Epi WafersTM Sakaguchi, K., Yonehara, T. Electrochemical Society	8 国際会議録 ELTRAN Epitaxial Layer Thansfer (Invited) Sakaguchi, Tyonehara; K, Sato, N Electrochemical Society
3 国際会議録 ELTRAN by Splitting Porous Si Layers Sakaguchi, K, Yanagita, Y, Kurisu, H, Suzuki, H, Obmi, K, Yonehara, T Electrochemical Society	9 国際会議録 Mechanism of Pore-Enlargement in Double Porous Si Layers Sakaguchi, K., Kurisu, H., Ohmi, K., Yonehara, T. Electrochemical Society
4 国際会議録 CVD-Epitaxial Growth on Porous Si for ELTRAN SOl-Epi Wafers Sato, N., Ishii, S., Yonehara, T. Electrochemical Society	10 国際会議録 Volume Production in ELTRANr SOI-Epi WafersTM Isaj, H., Nakayama, J., Yonehara, T. Electrochemical Society
5 国際会議録 Epiaxial Layer Transfer by Bond and Etch-Back of Porous SI Yonehara, T., Sakaguchi, K., Sato, N. Electrochemical Society	11 国際会議録 Detection of SOI Fatal Defects by Cu Decoration in Conjunction with HF Immersion Notsu, K., Honma, N., Yonehara, T. Electrochemical Society
6 国際会議録 EPITAXIAL GROWTH ON POROUS Si FOR A NEW BOND AND ETCH-BACK SOI Sato, N., Sakaguchi, K., Yamagata, K., Fujiyama, Y., Yonehara, T. Electrochemical Society	12 国際会議録 Determination of Diffusivities of Si Self-Diffusion and Si Self-Interstitials using Isotopically Enriched Single- or Multi-30Si Epitaxial Layers Matsumoto, S., Aid, S.R., Sakaguchi, T., Toyonaga, K., Nakabayashi, Y., Sakuraba, M., Shimamune, Y., Hashiba, Y., … Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12