Effect of Cobalt and Copper Contamination on the Electrical Properties

Effect of Cobalt and Copper Contamination on the Electrical Properties

著者名:

Benton, J.

掲載資料名:

High Purity Silicon VI : proceedings of the sixth International Symposium

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2000-17

発行年:

2000

開始ページ:

278

終了ページ:

286

総ページ数:

9

出版情報:

Bellingham, Wash.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772846 [1566772842]

言語:

英語

請求記号:

E23400/200017

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013986
シリーズID:	PA00000028
会議名:	International Symposium on High Purity Silicon ; Meeting of the Electrochemical Society
回次:	6th ; 198th
会議開催地:	Phoenix, Arizona, USA
会議開催年:	2000.10.22-2000.10.27

類似資料:

1 国際会議録 Effect of Cobalt and Copper Contamination on the Electrical Properties of Processed Silicon Benton,J., Boone,T., Jacobson,D., Silverman,P., Rafferty,C., Weinzierl,S., Vu,B. Electrochemical Society, SPIE-The International Society for Optical Engineering	7 国際会議録 CORRELATION OF ELECTRICAL, STRUCTURAL, AND OPTICAL PROPERTIES OF ERBIUM IN SILICON Benton, J.L., Eaglesham, D.J., Almonte, M., Citrin, P.R., Marcus, M.A., Adler, D.L., Jacobson, D.C., Poate, J.M. Materials Research Society
2 国際会議録 Metal contamination issues resulting from new Si processes Benton, J. L., Boone, T., Jacobson, D.C., Lin, Wen, Wilk, G.D., Krautter, H. W., Rosamilia, J.M., Rafferty, C.S. Electrochemical Society	8 国際会議録 Impact of Metal Contamination of 7.0 nm Gate Oxides on Various Substrate Materials Saito, S., Hamada, K., Eaglesham, D. J., Shiramizu, Y., Benton, J. L., Kitajima, H., Jacobson, S. D. C., Poate, J. M. MRS - Materials Research Society
3 国際会議録 ION IMPLANTED CALIBRATION STANDARDS FOR Si SURFACE CONTAMINATION DETECTION BY TXRF Jacobson, D. C., Poate, J. M., Higashi, G. S., Boone, T., Eaglesham, D. J., Hockett, Richard MRS - Materials Research Society	9 国際会議録 Impact of Metal Contamination of 7.0 nm Gate Oxides on Various Substrate Materials Saito, S., Hamada, K., Eaglesham, D. J., Shiramizu, Y., Benton, J. L., Kitajima, H., Jacobson, S. D. C., Poate, J. M. MRS - Materials Research Society
4 国際会議録 EVALUATION OF PHYSICAL AND ELECTRICAL PROPERTIES OF MOLYBDENUM IN SILICON FOR IC PROCESSING Benton, J.L., Jacobson, D.C., Jackson, B., Johnson, J.A., Eaglesham, D.J., Stevie, A., Becerro, J. Electrochemical Society	10 国際会議録 The Effect of the Extra Ion on Residual Damage in MeV-Implanted Si Libertino, S., Benton, J. L., Coffa, S., Jacobson, D. C., Eaglesham, D. J., Poate, J. M., Lavalle, M., Fuochi, P. G. MRS - Materials Research Society
5 国際会議録 Influence of Flouring and BF2 Implants on the Transient Enhanced Diffusion of Boron Vuong, H-H., Gossmann, H.-J., Rafferty, C.S., Luftman, H.S., Unterwald, F.C., Jacobson, D.C., Ahrens, R.E, Boone, T., … Electrochemical Society	11 国際会議録 Influence Of Vacuum Annealing on Native Si Point Defects Gossmann, H.-J., Mogi, T.K., Rafferty, C.S., Stolk, P.A., Eaglesham, D.J., Luftman, H.S., Unterwald, F.C., Boone, T., … Electrochemical Society
6 国際会議録 Correlation of electrical, structural, and optical properties of erbium in silicon Benton, J. L., Eaglesham, D. J., Almonte, M., Citrin, P. H., Marcus, M. A., Adler, D. L., Jacobson, D. C., Poate. J. M. MRS - Materials Research Society	12 国際会議録 The Mechanisms of Iron Gettering in Silicon by Boron Ion-Implantation Benton, J.L., Stolk, P.A., Eaglesham, D.J., Jacobson, D.C., Cheng, J.Y., Poate, J.M., Myers, S.M., Haynes, T.E Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12