Gate Dielectrics Formed by Remote Plasma Nitridaion of Ultrathin In-Situ Steam Generated (ISSG) Oxides | 東京工業大学附属図書館文献データベース

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Gate Dielectrics Formed by Remote Plasma Nitridaion of Ultrathin In-Situ Steam Generated (ISSG) Oxides

著者名:

さらに 4 件

掲載資料名:

Rapid thermal and other short-time processing technologies : proceedings of the international symposium

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2000-9

発行年:

2000

開始ページ:

231

終了ページ:

238

総ページ数:

8

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772747 [1566772745]

言語:

英語

請求記号:

E23400/2000-9

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013978
シリーズID:	PA00000028
会議名:	International Symposium on Rapid Thermal and Other Short-Time Processing Technologies ; Meeting of the Electrochemical Society
回次:	2000 ; 197th
会議開催地:	Toronto, ON, Canada
会議開催年:	2000.05.14-2000.05.18

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1 国際会議録 Remote Plasma Nitridation of In Situ Steam Generated (ISSG) Oxide Al-Shareef, Husam N., Karamcheti, A., Luo, T.T., Brown, G.A., Watt, V.H.C., Jackson, M.D., Huff, H.R., Jallepally, R., … Materials Research Society	7 国際会議録 Prospective technology for system-on-a-chip: N2 implant followed by VHP O2 reoxidation Luo,T.Y., Al-Shareef,H.N., Brown,G.A., Watt,V.H.C., Karamcheti,A., Jackson,M.D., Huff,H.R., Evans,B., Lee,C.H., … SPIE-The International Society for Optical Engineering
2 国際会議録 Ultrathin CVD Gate Dielectrics for 130 nm Technology Node Watt, V.H.C., Karamcheti, A., Luo, T.-Y, Al-Shareef, H.N., Jackson, M.D., Huff, H.R. Electrochemical Society	8 国際会議録 Influence of the Standard CMOS Procesing on Ta2O5 Gate Dielectric Transistors Performance Bersuker, G., Gilmer, M., Zeitzoff, P.M., Brown, G.A., Jackson, M.D., Shaapur, F., Foran, B., Huff, H.R. Electrochemical Society
3 国際会議録 Correlation between the reliability of ultrathin ISSG SiO2 and hydrogen content Luo,T.Y., Al-Shareef,H.N., Brown,G.A., Laughery,M., Watt,V.H.C., Karamcheti,A., Jackson,M.D., Huff,H.R. SPIE-The International Society for Optical Engineering	9 国際会議録 High Performance, Highly Reliable Gate Oxide Formed with Rapid Thermal Oxidation In-Situ Steam Generation (ISSG) Technique Ma, Y., Chen, Y.N., Brown, M.M, Li, F., Chen, Y., Eng, J., Jr., Opila, R.L., Chabal, Y.J., Sapjeta, J., Muller, D.A., … Electrochemical Society
4 国際会議録 Investigation of In-Situ Steam Generated Oxide (ISSG) followed by Remote Plasma Nitridation (RPN) for Effective Oxide Thickness Decrease and Gate Leakage … Eason, K., Jallepally, R., Noble, D., Hattangady, S., Khamankar, R., Rotondaro, A.L.P. Electrochemical Society	10 国際会議録 A Novel Method for Selective Oxidation of W/WNx/Poly Gate Stack Using RTP ISSG Techniques Joo, H.S., Ng, B., Lopes, D., Miner, G. Electrochemical Society
5 国際会議録 Development of Silicon Nitride Films for Gate Dielectric Applications Brady, D., Watt, V.H.C., Karamcheti, A., Vishnubhotla, L., Bersuker, G., Kim, S., Zietzoff, P., Gilmer, M., Guan, J., … Electrochemical Society	11 国際会議録 Remote plasma nitrided oxides for ultrathin gate dielectric applications (Invited Paper) Hattangady,S.V., Grider,O.T., Kraft,R., Shiau,W.-T., Douglas,M.A., Nicollian,P., Rodder,M., Brown,G.A., Chatterjee,A., … SPIE-The International Society for Optical Engineering
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