Effect of NH3 Plasma Treatment on Improvement of Reliability of Cu/W-B- N/HSQ Interconnect Structures

Effect of NH3 Plasma Treatment on Improvement of Reliability of Cu/W-B- N/HSQ Interconnect Structures

著者名:

Kim, D.J. ( (Hanyang University) )
Sim, H.S. ( (Korea Institute of Science and Technology) )
Kim, Y.T. ( (Korea Institute of Science and Technology) )
Park, J.-W. ( (Hanyang University) )

掲載資料名:

Low and high dielectric constant materials : materials science, processing, and reliability issues : proceedings of the fifth international symposium

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2000-5

発行年:

2000

開始ページ:

40

終了ページ:

47

総ページ数:

8

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772709 [1566772702]

言語:

英語

請求記号:

E23400/2000-5

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013974
シリーズID:	PA00000028
会議名:	International Symposium on Low and High Dielectric Constant Materials ; Meeting of the Electrochemical Society
回次:	5th ; 197th
会議開催地:	Toronto, Ontario, Canada
会議開催年:	2000.05.14-2000.05.19

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4 国際会議録 The Improvement in Dielectric Characteristics and Reliability of Atomic-Layer-Deposited HfO₂ Thin Films by In-Situ NH₃ Injection J. Kim, T. Park, M. Cho, M. Seo, J. Jang, C. Hwang Electrochemical Society	10 国際会議録 Length Effects On The Reliability Of Dual-Damascene Cu Interconnects Wei, F., Gan, C.L., Thompson, C.V., Clement, J.J., Hau-Riege, S.P., Pey, K.L., Choi, W.K., Tay, H.L., Yu, B., … Materials Research Society
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