Blank Cover Image

Soft Breakdown Mechanism in Ultrathin Gate Oxides

著者名:
掲載資料名:
The physics and chemistry of SiO2 and the Si-SiO2 interface-4, 2000 : proceedings of the fourth International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface, Tronto, Canada, May 15-18, 2000
シリーズ名:
Electrochemical Society Proceedings Series
シリーズ巻号:
2000-2
発行年:
2000
開始ページ:
409
終了ページ:
418
総ページ数:
10
出版情報:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566772679 [1566772672]
言語:
英語
請求記号:
E23400/2000-2
資料種別:
国際会議録

類似資料:

1 国際会議録 INVITED: TUNNEL CURRENT AND WEAROUT PHENOMENA IN SUB-5 nm GATE OXIDES

Hirose, M., Mizubayashi, W., Fukuda, M., Miyazaki, S.

Electrochemical Society
7 国際会議録 Roles of Predominant and Subordinate Carriers in Breakdown Mechanism of High-k Gate Dielectrics Studied with HfAlOx/SiO₂ Stacks

K. Okada, H. Ota, A. Ogawa, W. Mizubayashi, T. Horikawa, H. Satake, T. Nabatame, A. Toriumi

Electrochemical Society
2 国際会議録 Organic Contamination of Silicon Wafer in Clean Room Air and Its Impact to Gate Oxide Integrity

Imafuku, D., Mizubayashi, W., Miyazaki, S., Hirose, M., Wakayama, Y., Kobayashi, S.

MRS - Materials Research Society
8 国際会議録 Soft and Hard Breakdown of Ultrathin SiO2 Gate Oxides

Sune, J., Miranda, E.

Electrochemical Society
3 国際会議録 Organic Contamination of Silicon Wafer in Clean Room Air and Its Impact to Gate Oxide Integrity

Imafuku, D., Mizubayashi, W., Miyazaki, S., Hirose, M., Wakayama, Y., Kobayashi, S.

MRS - Materials Research Society
9 国際会議録 From radiation induced leakage current to soft breakdown in irradiated MOS devices with ultrathin gate oxide

Ceschia, M., Paccagnella, A., Cester, A., Ghidini, G., Wyss, J.

MRS-Materials Research Society
4 国際会議録 Soft Breakdown in Ultrathin Oxides

Weir, B. E., Silverman, P. J., Alers, G. B., Monroe, D., Alam, M. A., Sorsch, T. W., Green, M. L., Timp, G. L., Ma, Y., …

MRS - Materials Research Society
10 国際会議録 Electronic Density of States at the Ultrathin SiO2/Si Interfaces

Hirose, M., Alay, J.L., Yoshida, T., Miyazaki, S.

Electrochemical Society
5 国際会議録 Modeling Soft Breakdown of Ultrathin Gate Oxide Layers

Houssa, M., Mertens, P. W., Heyns, M. M.

MRS - Materials Research Society
11 国際会議録 Evaluation of GaP States in Hydrogen-Terminated Silicon Surfaces and Ultrathin SiO2/Si Interfaces by Using Photoelectron Yield Spectroscopy

Miyazaki, S., Tamura, T., Maruyama, T., Murakami, H., Kohno, A., Hirose, M.

MRS - Materials Research Society
6 国際会議録 Investigation of quasi-breakdown mechanism in ultrathin gate oxides

Guan, Hao, He, Y. D., Li, M. F., Cho, Byung Jin, Dong, Zhong

MRS-Materials Research Society
12 国際会議録 Remote plasma nitrided oxides for ultrathin gate dielectric applications (Invited Paper)

Hattangady,S.V., Grider,O.T., Kraft,R., Shiau,W.-T., Douglas,M.A., Nicollian,P., Rodder,M., Brown,G.A., Chatterjee,A., …

SPIE-The International Society for Optical Engineering
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12