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Nitrogen Implantation Effects on Ultra-Thin Gate Oxide Grown on Nitrogen-Implanted Silicon

著者名:
Nam, I.-H.
Hong, S.I.
Sim, J.S.
Park, B.-G.
Lee, J.D.
Lee, S.-W.
Kang, M.-S.
Kim, Y.-W.
Suh, K.-P.
さらに 4 件
掲載資料名:
The physics and chemistry of SiO2 and the Si-SiO2 interface-4, 2000 : proceedings of the fourth International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface, Tronto, Canada, May 15-18, 2000
シリーズ名:
Electrochemical Society Proceedings Series
シリーズ巻号:
2000-2
発行年:
2000
開始ページ:
199
終了ページ:
208
総ページ数:
10
出版情報:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566772679 [1566772672]
言語:
英語
請求記号:
E23400/2000-2
資料種別:
国際会議録

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