100mm Diameter AlGaN and GaN Films Grown on Si(III) Substrates

100mm Diameter AlGaN and GaN Films Grown on Si(III) Substrates

著者名:

Liaw, H.M.

掲載資料名:

Compound semiconductor power transistors II : proceedings of the second international symposium and state-of-the-art program on compound semiconductors (SOTAPOCS XXXII) : proceedings of the thirty-second international symposium

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2000-1

発行年:

2000

開始ページ:

150

終了ページ:

161

総ページ数:

12

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772662 [1566772664]

言語:

英語

請求記号:

E23400/2000-1

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013970
シリーズID:	PA00000028
会議名:	International Symposium on Compound Semiconductor Power Transistors ; State-of-the-Art Program on Compound Semiconductors - SOTAPOCS ; Meeting of the Electrochemical Society
回次:	2nd ; 32nd ; 197th
会議開催地:	Toronto, Ontario, Canada
会議開催年:	2000.05.14-2000.05.19

類似資料:

1 国際会議録 Crack-Free, Single-Crystal GaN Grown on 100 mm Diameter Silicon Liaw, H. M., Venugopal, R., Wan, J., Doyle, R., Fejes, P., Loboda, M. J., Melloch, M. R. Trans Tech Publications	7 国際会議録 High Quantum Efficiency AlGaN/GaN Solar-Blind Photodetectors Grown by Metalorganic Chemical Vapor Deposition Chowdhury, U., Wong, M.M., Collins, C.J., Yang, B., Zhu, T.G., Beck, A.L., Campbell, J.C., Dupuis, R.D. Materials Research Society
2 国際会議録 Optical Characterization of Acceptor Implantation in GaN Skromme, B.J., Martinez, G.L., Suvkhanov, A., Krasnobaev, L., Poker, D.B. Electrochemical Society	8 国際会議録 Evolution of Subgrain Boundaries in Heteroepitaxial GaN/AlN/6H-SiC Grown by Metalorganic Chemical Vapor Deposition Liu, H.X., Ali, G.N., Palle, K.C., Mikhov, M.K., Skromme, B.J., Reitmeyer, Z.J., Davis, R.F. Materials Research Society
3 国際会議録 Substrate Bias Effects in AlGaN/GaN Doped Channel Heterostructure Field Effect Transistors Grown on Doped SiC Substrates Gaska,R., Shur,M.S., Yang,J.W., Osinsky,A., Orlov,A.O., Snider,G.L. Trans Tech Publications	9 国際会議録 Strain Relaxation in GaN/AlN Films Grown on Vicinal and On-Axis SiC Substrates Bai, J., Huang, X., Raghothamachar, B., Dudley, M., Wagner, B., Davis, R.F., Wu, L., Zhu, Y. Trans Tech Publications
4 国際会議録 Spectroscopic Characterization of Ion-Implanted GaN Chen, L., Skromme, B.J. Materials Research Society	10 国際会議録 Resonant Tunneling Devices with Direct Sidewall Gates Janes, D.B., Kolagunta, V.R., Chen, G.L., Webb, K.J., Melloch, M.R. Electrochemical Society
5 国際会議録 Optical Characterization of Bulk GaN Grown From a Na/Ga Flux Palle, K., Chen, L., Liu, H.X., Skromme, B.J., Yamane, H., Aoki, M., Hoffman, C.B., DiSalvo, F.J. Materials Research Society	11 国際会議録 High Magnetic Field Studies of AlGaN/GaN Heterostructures Grown On Bulk GaN, SiC, and Sapphire Substrates Knap, W., Borovitskaya, E., Shur, M. S., Gaska, R., Brandt, B., Maude, D., Frayssinet, E., Lorenzini, P., Grandjean, N., … Materials Research Society
6 国際会議録 Optical activation behavior of ion implanted acceptor species in GaN Skromme, B. J., Martinez, G. L. MRS-Materials Research Society	12 国際会議録 Reactive MBE Growth of GaN and GaN:H on GaN/SiC Substrates Johnson, M. A. L., Yu, Zhonghai, Boney, C., Hughes, W. C., Cook, J. W., Jr., Schetzina, J. F., Zhao, H., Skromme, B. J., … MRS - Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12