Effect of CMP Polish Conditions on the Step Height Reduction and on Local Removal Rate for 0.25μm CMOS Process

Effect of CMP Polish Conditions on the Step Height Reduction and on Local Removal Rate for 0.25μm CMOS Process

著者名:

掲載資料名:

Chemical mechanical planariarization in IC device manufacturing III : proceedings of the international symposium

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

99-37

発行年:

1999

開始ページ:

348

終了ページ:

353

総ページ数:

6

出版情報:

Pennington, N. J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772600 [1566772605]

言語:

英語

請求記号:

E23400/99-37

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013965
シリーズID:	PA00000028
会議名:	International Symposium on Chemical Mechanical Planarization ; Meeting of the Electrochemical Society ; Fall Meeting of the Electrochamical Society of Japan
回次:	3rd ; 196th ; 1999
会議開催地:	Honolulu, Hawaii, USA
会議開催年:	1999.10.20-1999.10.22

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