Hetero-Epitaxial Growth of 3C-SiC on SOI using HMDS | 東京工業大学附属図書館文献データベース

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Hetero-Epitaxial Growth of 3C-SiC on SOI using HMDS

著者名:

Aboughe-Nze, P.

さらに 5 件

掲載資料名:

Semiconductor wafer bonding : science, technology, and applications : proceedings of the international symposia

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

99-35

発行年:

1999

開始ページ:

92

終了ページ:

99

総ページ数:

8

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772587 [1566772583]

言語:

英語

請求記号:

E23400/99-35

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013963
シリーズID:	PA00000028
会議名:	International Symposium on Wafer Bonding ; Fall Meeting of the Electrochemical Society
回次:	5th ; 1999
会議開催地:	Honololu. HI, USA
会議開催年:	1999.10.00

類似資料:

1 国際会議録 Characterization of 3C-SiC/SOI Deposited with HMDS Planes, N., Aboughe-Nze, P., Ravetz, M., Contreras, S., Vicente, P., Chassagne, T., Fraisse, B., Camassel, J., Monteil, … Trans Tech Publications	7 国際会議録 Aluminum Doping of 4H-SiC Grown with HexaMethylDiSilane Sartel, C., Souliere, V., Zielinski, M., Monteil, Y., Camassel, J., Rushworth, S. Trans Tech Publications
2 国際会議録 3C-SiC Pseudosubstrates for the Growth of Cubic GaN Aboughe-Nze, P., Chassagne, T., Chaussende, D., Monteil, Y., Cauwet, F., Bustarret, E., Deneuville, A., Bentoumi, G., … Trans Tech Publications	8 国際会議録 SiC Thin Film Characterization and Stress Measurements for High-Temperature Sensors Applications Gourbeyre, C., Aboughe-nze, P., Malhaire, C., Berre, M., Monteil, Y., Barbier, D. Materials Research Society
3 国際会議録 Improved SiCOI Structures Elaborated by Heteroepitaxy of 3C-SiC on SOI Chassagne, T., Ferro, G., Wang, H., Stoemenos, Y., Peyre, H., Contreras, S., Camassel, J., Monteil, Y., Ghyselen, B. Trans Tech Publications	9 国際会議録 Evaluation of p-Type Doping for (1120) Epitaxial Layers Grown on α-Cut (1120) 4H-SiC Substrates Blanc, C., Zielinski, M., Souliere, V., Sartel, C., Juillaguet, S., Contreras, S., Camassel, J., Monteil, Y. Trans Tech Publications
4 国際会議録 Improved SiCOI Structures Elaborated by Heteroepitaxy of 3C-SiC on SOI Chassagne, T., Ferro, G., Wang, H., Stoemenos, Y., Peyre, H., Contreras, S., Camassel, J., Monteil, Y., Ghyselen, B. Trans Tech Publications	10 国際会議録 Epitaxial Growth of 4H-SiC with Hexamethyldisilane HMDS Sartel, C., Souliere, V., Dazord, J., Monteil, Y., El-Harrouni, I., Bluet, J.M., Guillot, G. Trans Tech Publications
5 国際会議録 Potential of HMDS/C3H8 Precursor System for the Growth of State of the Art Heteroepitaxial 3C-SiC Layers on Si(100) Ferro, G., Camassel, J., Juillaguet, S., Balloud, C., Polychroniadis, E.K., Stoimenos, Y., Seigle-Ferrand, P., Dazord, … Trans Tech Publications	11 国際会議録 Epitaxial Growth of 4H-SiC with Hexamethyldisilane HMDS Sartel, C., Souliere, V., Dazord, J., Monteil, Y., El-Harrouni, I., Bluet, J.M., Guillot, G. Trans Tech Publications
6 国際会議録 Growth at High Rates and Characterization of Bulk 3C-SiC Material Ferro, G., Balloud, C., Juillaguet, S., Vicente, P., Camassel, J., Monteil, Y. Trans Tech Publications	12 国際会議録 Comparative Studies of <0001> 4H-SiC Layers Grown with Either Silane or HexaMethylDisilane / Propane Precursor Systems Sartel, C., Balloud, C., Souliere, V., Juillaguet, S., Dazord, J., Monteil, Y., Camassel, J., Rushworth, S. Trans Tech Publications

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