The Mechanism of Notching Formation between ARC TIN and AICu Layer During Etching

The Mechanism of Notching Formation between ARC TIN and AICu Layer During Etching

著者名:

掲載資料名:

Plasma etching processes for sub-quarter micron devices : proceedings of the international symposium

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

99-30

発行年:

1999

開始ページ:

344

終了ページ:

350

総ページ数:

7

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772532 [1566772532]

言語:

英語

請求記号:

E23400/99-30

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013958
シリーズID:	PA00000028
会議名:	International symposium on plasma etching processes for sub-quarter micron devices ; Joint international meeting of the Electrochemical Society and the Electrochemical Society of Japan
回次:	1999 ; 1999
会議開催地:	Honolulu, HI, USA
会議開催年:	1999.10.17-1999.10.22

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