Integrated SAC and Liner Etch for 0.15 um Node Technology

Integrated SAC and Liner Etch for 0.15 um Node Technology

著者名:

掲載資料名:

Plasma etching processes for sub-quarter micron devices : proceedings of the international symposium

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

99-30

発行年:

1999

開始ページ:

233

終了ページ:

238

総ページ数:

6

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772532 [1566772532]

言語:

英語

請求記号:

E23400/99-30

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013958
シリーズID:	PA00000028
会議名:	International symposium on plasma etching processes for sub-quarter micron devices ; Joint international meeting of the Electrochemical Society and the Electrochemical Society of Japan
回次:	1999 ; 1999
会議開催地:	Honolulu, HI, USA
会議開催年:	1999.10.17-1999.10.22

類似資料:

1 国際会議録 Etching Sub-0.25 um Micron Dual Damascene Structures by High Density Plasmas Chaudhary, N., Cowley, A., Dobuzinsky, D. Electrochemical Society	7 国際会議録 Low-K Etch/Ash For 0.1 um Node Suemasa, Tomoki, Inazawa, Kouichiro, Chen, Li-Hung, Nishimura, Eiichi Electrochemical Society
2 国際会議録 IDENTIFICATION OF THE 0.15 eV DONOR DEFECT IN BULK GaAs Fang, Z-Q, Hemsky, J. W., Look, D. C. MRS - Materials Research Society	8 国際会議録 Etching characteristics of organic low-k dielectrics in the helicon-wave plasma etcher for 0.15-μm damascene architecture Shieh,J.-M., Wei,T.C., Liu,C.H., Suen,S.-C., Dai,B.-T. SPIE-The International Society for Optical Engineering
3 国際会議録 A method of tn-situ Monitoring Oxide/Nitride Etch Selectivity Fang, S., Gutmann, A., Flietner, B. Electrochemical Society	9 国際会議録 Identifying process window marginalities of reticle designs for 0.15/0.13-μm technologies Lo, S.C., Hsieh, L.K., Yeh, J.B., Pai, Y.-C., Tseng, W., Lin, M., Peterson, I.B. SPIE-The International Society for Optical Engineering
4 国際会議録 Characterization and improvement of field CD uniformity for implementation of 0.15-μm technology device using KrF stepper Hyun, Y.-S., Kim, D.-J., Koh, C.-W., Park, S.-N., Kwon, W.-T. SPIE-The International Society for Optical Engineering	10 国際会議録 0.35 um and sub-0.35 um Matal Stack Etch in a DPS Chamber - DPS Chamber and Process Characterization Ye, Y., Ma, D., Hanawa, H., Loewenhardt, P., Zhao, A., Shiau, J., Yan, C., Webb, T., Mak, S., Papanu, J., Yin, G. Electrochemical Society
5 国際会議録 Integration challenges at 0.15-ｦﾌm technology node Moghadam,F. SPIE - The International Society for Optical Engineering	11 国際会議録 Technology of electroplating copper with low-K material a-C:F for 0.15-μm damascene interconnection Shieh,J.-M., Suen,S.-C., Lin,K.-C., Chang,S.-C., Dai,B.-T., Chen,C.-F., Feng,M.-S. SPIE-The International Society for Optical Engineering
6 国際会議録 Integration challenges at 0.15-ｦﾌm technology node Moghadam,F. SPIE - The International Society for Optical Engineering	12 国際会議録 Process window simulation study with immersion lithography for 45-nm technology node Park, O., Gutmann, A., Neumueller, W., Back, D. SPIE - The International Society of Optical Engineering

1

2

3

4

5

6

7

8

9

10

11

12