Effect of Plasma Damage on Gate Oxide Grown on Nitrogen Implanted Silicon Substrate for 0.25 um CMOS Technology

Effect of Plasma Damage on Gate Oxide Grown on Nitrogen Implanted Silicon Substrate for 0.25 um CMOS Technology

著者名:

掲載資料名:

Plasma etching processes for sub-quarter micron devices : proceedings of the international symposium

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

99-30

発行年:

1999

開始ページ:

159

終了ページ:

166

総ページ数:

8

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772532 [1566772532]

言語:

英語

請求記号:

E23400/99-30

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013958
シリーズID:	PA00000028
会議名:	International symposium on plasma etching processes for sub-quarter micron devices ; Joint international meeting of the Electrochemical Society and the Electrochemical Society of Japan
回次:	1999 ; 1999
会議開催地:	Honolulu, HI, USA
会議開催年:	1999.10.17-1999.10.22

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