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Next-Generation Thin Films for Photovoltaics: InGaAsN

著者名:
Jones, E.D.
Allerman, A.A.
Friedman, D.J.
Geisz, J.F.
Klem, J.F.
Kurtz, S.R.
Modine, N.R.
Shan, W.
Tu, C.
Walukiewicz, W.
さらに 5 件
掲載資料名:
Photovoltaics for the 21st century : proceedings of the international symposium
シリーズ名:
Electrochemical Society Proceedings Series
シリーズ巻号:
99-11
発行年:
1999
開始ページ:
252
終了ページ:
267
出版情報:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566772334 [1566772338]
言語:
英語
請求記号:
E23400/99-11
資料種別:
国際会議録

類似資料:

1 国際会議録 Minority-Carrier Lifetimes, Defects, and Solar Cells of InGaAsN, Lattice-Matched to GaAs

Kurtz, S.R., Allerman, A.A., Jones, E.D., Klem, J.F., Seager, C.H.

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7 国際会議録 Nitrogen-Induced Modification of the Electronic Band Structures in Group III-N-V Alloys

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2 国際会議録 The Role of Nitrogen-Induced Localization and Defects in InGaAsN (= 2 N):Comparison of InGaAsN Grown by Molecular Beam Epitaxy and Metal-Organic Chemical Vapor …

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8 国際会議録 Comparison Of Deep Level Spectra of MBE- and MOCVD-Grown InGaAsN

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3 国際会議録 Photoluminescence Investigations of InGaAsN Alloy Lattice-Matched to GaAs

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9 国際会議録 Effective masses for small nitrogen concentrations in InGaAsN alloys on GaAs

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4 国際会議録 Optical properties of InGaAsN:a new 1-eV bandgap material system

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10 国際会議録 The Growth of InGaAsN for High-Efficiency Solar Cells by Metalorganic Chemical Vapor Deposition

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12 国際会議録 Hydrazine N Source for Growth of GaInNAs for Solar Cells

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