Transient Enhanced Diffusion and Ostwald Ripening of Ion-Implantation Generated Defects in Silicon | 東京工業大学附属図書館文献データベース

Blank Cover Image

Transient Enhanced Diffusion and Ostwald Ripening of Ion-Implantation Generated Defects in Silicon

著者名:

Huizing, H.G.A.

van Berkum, J.G.M

さらに 5 件

掲載資料名:

Advances in rapid thermal processing : proceedings of the symposium

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

99-10

発行年:

1999

開始ページ:

125

終了ページ:

132

総ページ数:

8

出版情報:

Pennington, N. J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772327 [156677232X]

言語:

英語

請求記号:

E23400/99-10

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013940
シリーズID:	PA00000028
会議名:	International symposium on advances in rapid thermal processing ; Meeting of Electrochemical Society
回次:	1999 ; 195th
会議開催地:	Seattle, WA, USA
会議開催年:	1999.05.03-1999.05.06

類似資料:

1 国際会議録 Ostwald Ripening of {113} Defects Precursors and Transient Enhanced Diffusion Mannino, G., Cowern, N. E. B., Stolk, P. A., Roozeboom, F., Huizing, H. G. A., Berkum, J. G. M. van, Boer, W. B. de, … MRS - Materials Research Society	7 国際会議録 Concept of Electrically Switchable Reflector Films on the Camber Walls of RTP Reactors Roozeboom, F., van der Sluis, P., Cowern, N.E.B. Electrochemical Society
2 国際会議録 Role of Silicon and Boron Interstitial Clusters in Transient Enhanced Diffusion Cowern, N.E.B., Mannino, G., Roozeboom, F., van Berkum, J.G.M, Colombeau, B., Claverie, A. Electrochemical Society	8 国際会議録 Shallow Junction Fabrication by Rapid Thermal Outdiffusion from Implanted Oxide Schmirz, I., van Gestel, M., Stolk, P.A., Pononarev, Y.V., Roozeboo, F., Cohayncs, F.N., van Berkum, I.G.M., van de … Electrochemical Society
3 国際会議録 The Effect of Oxygen on the Electrical Activation and Diffusion of Ion-Implanted Boron Larsen, K. Kyllesbech, Stolk, P. A., Privitera, V., Berkum, J. G. M. van, Boer, W. B. de, Mannino, G., Cowern, N. E. B., … MRS - Materials Research Society	9 国際会議録 Ultrashallow Junction Formation And Gate Activation In Deep-Submicron CMOS Stolk, Peter A., Cubaynes, Florence N., Meyssen, Veerle, Mannino, Giov'anni, Cowern, Nicholas E.B., Zijl, Jeroen van, … Materials Research Society
4 国際会議録 TRANSIENT DIFFUSION OF SOPANTS IN SILICON: PHYSICS MODELING, AND PRACTICAL SIMULATIONS Cowern, N.E.B. Electrochemical Society	10 国際会議録 Experimental study on the mechanism of carbon diffusion in silicon Cowern, N.E.B., Colombeau, B., Roozeboom, F., Hopstaken, M., Snijders, H., Meunier-Beillard, P., Lerch, W. Materials Research Society
5 国際会議録 Low-Energy Implantation and Transient-Enhanced Diffusion: Physical Mechanisms and Technology Implications Cowern, N. E. B., Collart, E. J. H., Politiek, J., Bancken, P. H. L., Berkum, J. G. M. van, Larsen, K. Kyllesbech, … MRS - Materials Research Society	11 国際会議録 Diffusion of Ion-Implanted Boron and Silicon in Germanium Uppal, Suresh, Willoughby, A.F.W., Bonar, J.M., Cowern, N.E.B., Morris, R.J.H., Dowsett, M.G. Materials Research Society
6 国際会議録 Current Understanding and Modeling of B Diffusion and Activation Anomalies in Preamorphized Ultra-Shallow Junctions Colombeau, B., Smith, A.J., Cowern, N.E.B., Pawlak, B.J., Cristiano, F., Duffy, R., Claverie, A., Ortiz, C.J., Pichler, … Materials Research Society	12 国際会議録 Physics-Based Diffusion Simulations for Preamorphized Ultra-Shallow Junctions Cowern, N. E. B., Colombeau, B., Lampin, E., Cristiano, F., Claverie, A., Lamrani, Y., Duffy, R., Venezia, V., Heringa, … Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12