Blank Cover Image

Interfacial l?roperties of Si-Si3N4 Formed by Remote Plasma and Rapid Thermal Processing

著者名:
Lazar, H.
Misra, V.
Wang, Z.
Mulkarni, M.
Li, W.
Mahler, M.
Houser, J.R.
さらに 2 件
掲載資料名:
Advances in rapid thermal processing : proceedings of the symposium
シリーズ名:
Electrochemical Society Proceedings Series
シリーズ巻号:
99-10
発行年:
1999
開始ページ:
95
終了ページ:
102
総ページ数:
8
出版情報:
Pennington, N. J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566772327 [156677232X]
言語:
英語
請求記号:
E23400/99-10
資料種別:
国際会議録

類似資料:

1 国際会議録 Interfacial Properties of Si-Si3N4 Formed by Remote Plasma Enhanced Chemical Vapor Deposition

Misra, V., Lazar, H., Kulkarni, M., Wang, Z., Lucovsky, G., Hauser, J. R.

MRS - Materials Research Society
7 国際会議録 RAPID THERMAL PROCESSING OF HIGH TEMPERATURE SUPERCONDUCTING FIBER

Halloran, J. W., Neal, M. J., Ginley, D. S., Venturini, E. L., Kwak, J. F., baughman, R. J., Mitchell, M. A., Morosin, …

Materials Research Society
2 国際会議録 Characterization of Ultrathin Oxide Interfaces (Tox <1 nm) in Oxide-Nitride Stack Formed by Remote Plasma Enhanced Chemical Vapor Deposition

Wang, Z., Wang, S., Young, W.Li, Croswell, R.T., Hauser, J.R.

Electrochemical Society
8 国際会議録 High-Quality Ultrathin CVD Si3N4 Gate Dielectrics Fabricated by Rapid Thermal Process

Song, S. C., Luan, H. F., Gardner, M., Fulford, J., Allen, M., Kwong, D. L.

MRS - Materials Research Society
3 国際会議録 High Performance, Highly Reliable Gate Oxide Formed with Rapid Thermal Oxidation In-Situ Steam Generation (ISSG) Technique

Ma, Y., Chen, Y.N., Brown, M.M, Li, F., Chen, Y., Eng, J., Jr., Opila, R.L., Chabal, Y.J., Sapjeta, J., Muller, D.A., …

Electrochemical Society
9 国際会議録 4H-SiC P+N UV Photodiodes : A Comparison between Beam and Plasma Doping Processes

S. Biondo, L. Ottaviani, M. Lazar, D. Planson, J. Duchaine

Trans Tech Publications
4 国際会議録 *INTERFACIAL MICROSTRUCTURE AND CARRIER CONDUCTION PROCESS IN Pt/Ti OHMIC CONTACT TO p-In0.53Ga0.47As FORMED BY RAPID THERMAL PROCESSING

Chu, S. N. G., Katz, A., Boone, T., Thomas, P. M., Riggs, V. G., Dautremont-Smith, W. C., Johnson Jr., W. D.

Materials Research Society
10 国際会議録 An XPS study of silicon oxynitride rapid thermally grown in nitric oxide

Lai, W. H., Li, M. F., Pan, J. S., Liu, R., Chan, L., Chua, T. C.

MRS-Materials Research Society
5 国際会議録 A dual-function UHV-Compatible chamber for (i) low-temperature plasma-assisted oxidation, and (ii) high-temperature rapid thermal processing of Si-based …

Hattangady, S., Xu, X-L, Watkins, M. J., Hornung, B., Misra, V., Lucovsky, G., Wortman, J. J.

MRS - Materials Research Society
11 国際会議録 CONTROL OF Si-SiO2 INTERFACE PROPERTIES IN MOS DEVICES PREPARED BY PLASMA-ASSISTED AND RAPID THERMAL PROCESSES

Lucovsky, G., Yasuda, T., Ma, Y., Hattangady, S. V., Xu, X-L., Misra, V., Hornung, B., Wortman, J. J.

MRS - Materials Research Society
6 国際会議録 Formation of Stacked Gate Oxides by Rapid-Thermal Processing

Misra, V., Heinisch, H.H., Henson, W.K., Hornung, B.E., Wortman, J.J.

Electrochemical Society
12 国際会議録 *APPLICATIONS OF RAPID THERMAL PROCESSING

Gibbons, J. F., Bodkin, D. M., Grenier, M. E., Hoyt, J. L., Opyd, W. G.

North-Holland
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12