Organic Contamination on Si Wafers in Fab Environments and its Effects on Gate Oxide Integrity

Organic Contamination on Si Wafers in Fab Environments and its Effects on Gate Oxide Integrity

著者名:

掲載資料名:

Silicon nitride and silicon dioxide thin insulating films, proceedings of the fifth International Symposium

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

99-6

発行年:

1999

開始ページ:

250

終了ページ:

259

総ページ数:

10

出版情報:

Pennington, New Jersey: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772280 [1566772281]

言語:

英語

請求記号:

E23400/99-6

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013936
シリーズID:	PA00000028
会議名:	Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films
回次:	5th
会議開催地:	Seattle, WA, USA
会議開催年:	1999.05.02-1999.05.07

類似資料:

1 国際会議録 ORGANIC CONTAMINATION ON SILICON WAFER SURFACES IN PROCESSING ENVIRONMENT Tanishima, M., Abe, N. Electrochemical Society	7 国際会議録 Through-pellicle-capable DUV-based CD metrology on reticles for wafer fab and R&D environment Jonckheere, R.M., Philipsen, V., Scheuring, G., Hillmann, F., Brueck, H.-J., Ordynskyy, V., Peter, K., Hourd, A.C., … SPIE-The International Society for Optical Engineering
2 国際会議録 Hf Cross-Contamination in RTCVD System and its Effect on Gate Oxide Lntegnty Jean, J., Vermeire, B., Parks, H., Raghavan, S., Ogle, B. Electrochemical Society	8 国際会議録 The effects of Matallic Contamination on Gate Oxide Integrity-Ti, W Choi, H., Park, C., Yeo, I., Kim, H., Lee, S., Kim, C. Electrochemical Society
3 国際会議録 Organic Contamination of Silicon Wafer in Clean Room Air and Its Impact to Gate Oxide Integrity Imafuku, D., Mizubayashi, W., Miyazaki, S., Hirose, M., Wakayama, Y., Kobayashi, S. MRS - Materials Research Society	9 国際会議録 MONITORING IRON CONTAMINATION IN SILICON BY SURFACE PHOTOVOLTAGE AND CORRELATION TO GATE OXIDE INTEGRITY Henley, Worth B., Jastrzebski, Lubek, Haddad, Nadim F. MRS - Materials Research Society
4 国際会議録 Organic Contamination of Silicon Wafer in Clean Room Air and Its Impact to Gate Oxide Integrity Imafuku, D., Mizubayashi, W., Miyazaki, S., Hirose, M., Wakayama, Y., Kobayashi, S. MRS - Materials Research Society	10 国際会議録 56. Performance of nitrided Hf-silicate high-k gate dielectrics Jeon, J., Arasnia, Q.Xiang; F., Zhong, J., Goo, J.S., Halliyol, A., Kim, H.S., Clark-Phelps, B., Zhong, H., Ogle, B. Electrochemical Society
5 国際会議録 CHARACTERIZATION OF HF-LAST CLEANED Si FOR GATE OXIDES Jeon, J.S., Glick, J.S., Jafarpour, A., Ogle, B. Electrochemical Society	11 国際会議録 EFFECTS OF SILICON ION IMPLANTATION UPON THIN GATE OXIDE INTEGRITY Lee, G.-S., Park, J. -G., Choi, S. -P., Shin, C.-H,, Sun, Y.-B, Kwak, Y.-S., Shin, C.-K., Smith, W. L., Hahn, S. Materials Research Society
6 国際会議録 CRITICAL ASPECTS OF WAFER CLEANING AND GATE OXIDE INTEGRITY Mertens, P.W., Meuris, M., Schmidt, H.F., Verhaverbeke, S., Heyns, M.M., Carr, P., Graeff, D., Schnegg, A., Kubota, M., … Electrochemical Society	12 国際会議録 Degradation of Gate Oxide Integrity due to Ni and Cu Contamination and Impurity Gettering in Epitaxial Si Wafers Koveshnikov, S., Beauchaine, D., Radzimski, Z., Higgs, V. Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12