Properties of N- and P-Channel MOSFETs with Ultrathin RICYD Oxynitride Gate Dielectrics.

Properties of N- and P-Channel MOSFETs with Ultrathin RICYD Oxynitride Gate Dielectrics.

著者名:

掲載資料名:

Silicon nitride and silicon dioxide thin insulating films, proceedings of the fifth International Symposium

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

99-6

発行年:

1999

開始ページ:

90

終了ページ:

106

総ページ数:

17

出版情報:

Pennington, New Jersey: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772280 [1566772281]

言語:

英語

請求記号:

E23400/99-6

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013936
シリーズID:	PA00000028
会議名:	Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films
回次:	5th
会議開催地:	Seattle, WA, USA
会議開催年:	1999.05.02-1999.05.07

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