Dependence of Oxide Electric Field and Gate Electrode Work Function on the Reliability of Thin MOS Gate Oxides

Dependence of Oxide Electric Field and Gate Electrode Work Function on the Reliability of Thin MOS Gate Oxides

著者名:

掲載資料名:

Silicon nitride and silicon dioxide thin insulating films, proceedings of the fifth International Symposium

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

99-6

発行年:

1999

開始ページ:

3

終了ページ:

10

総ページ数:

8

出版情報:

Pennington, New Jersey: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772280 [1566772281]

言語:

英語

請求記号:

E23400/99-6

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013936
シリーズID:	PA00000028
会議名:	Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films
回次:	5th
会議開催地:	Seattle, WA, USA
会議開催年:	1999.05.02-1999.05.07

類似資料:

1 国際会議録 Dependence of Reliability of Ultrathin MOS Gate Oxides on the Fermi Level Positions at Gate and Substrate Yang, Tien-Chun, Bhat, Navakanta, Saraswat, Krishana C. MRS - Materials Research Society	7 国際会議録 Effect of Annealing Ambient on Performance and Reliability of Low Pressure Chemical Vapor Deposited Oxides for Thin-Film Transistors Bhat, N., Wang, A., Saraswat, K. C. MRS - Materials Research Society
2 国際会議録 Effect of Growth Conditions on the Reliability of Ultrathin MOS Gate Oxides Yang, Tien-Chun, Saraswat, Krishna C. MRS - Materials Research Society	8 国際会議録 Effects of Arsenic Concentration Profile on Electric Properties of Gate Oxide in MOS Devices Chang-Liao, K.-S., Chuang, C.-S. Electrochemical Society
3 国際会議録 Effect of Interface Stress on Reliability of Gate Oxide Yang, T.C., Bhat, N., Saraswat, K.C. Electrochemical Society	9 国際会議録 Structural Evolution and Point Defects in Metal Oxide-based High-k Gate Dielectrics McIntyre, P. C., Kim, H., Saraswat, K. C. Springer
4 国際会議録 The Effect of Impurities in Thin Film When Used as MOS Gate Electrodes Yang, H., Hu, J. C., Lu, J. P., Brown, G. A., Rotondara, A. L. P., Luttmer, J. D., Magel, L. K., Liu, H-Y., Chen, P. J. MRS - Materials Research Society	10 国際会議録 24 Effect of Thin Metal Layers on the Work Function of Polysilicon-Metal Electrode Stacks Alshareef, H., Wen, H.-C., Choi, K., Harris, R., Lysaght, P., Luan, H., Majhi, P., Lee, B.H. Electrochemical Society
5 国際会議録 Growth and Characterization of Thin Wet Oxides Grown by Rapid Thermal Processing Sharangpani, R., Das, J., Tay, S. P., Thakur, R. P. S., Yang, T. C., Saraswat, K. C. MRS - Materials Research Society	11 国際会議録 Gate Oxide Thinning in MOS Structures with Shallow Trench Isolation Balasubramanian, N., Johnson, E., Perera, C., Mian, C.-S., Sheng, T.-T., Peidous, I.V., Ping, C., Cuthbertson, A., … Electrochemical Society
6 国際会議録 Gate Oxide Long-Term Reliability of 4H-SiC MOS Devices L.C. Yu, K.P. Cheung, G. Dunne, K. Matocha, J.S. Suehle Trans Tech Publications	12 国際会議録 Gate-Area Dependence of SiC Thermal Oxides Reliability J. Senzaki, A. Shimozato, M. Okamoto, K. Kojima, K. Fukuda Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12