Effects of Strain Relaxation on the Carrier Transport Properties on InP-based Pseudomorphic High Electron Mobility Structures | 東京工業大学附属図書館文献データベース

Blank Cover Image

Effects of Strain Relaxation on the Carrier Transport Properties on InP-based Pseudomorphic High Electron Mobility Structures

著者名:

さらに 5 件

掲載資料名:

Proceedings of the State-of-the-Art Program on Compound Semiconductors (SOTAPOCs XXX)

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

99-4

発行年:

1999

開始ページ:

146

終了ページ:

154

総ページ数:

9

出版情報:

Pennington, N. J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772266 [1566772265]

言語:

英語

請求記号:

E23400/99-4

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013934
シリーズID:	PA00000028
会議名:	Meeting of the Electrochemical Society
回次:	195th
会議開催地:	Seattle, WA, USA
会議開催年:	1999.05.02-1999.05.07

類似資料:

1 国際会議録 Implantation Temperature Effect on the Defect Profile in Hydrogen Implanted InP Hayashi, S., Sandhu, R., Bruno, D., Wojtowicz, M., Goorsky, M.S. Electrochemical Society	7 国際会議録 X-Ray Diffraction Imaging of GaN-Based Heterostructures on SiC Poust, B., Feichtinger, P., Sandhu, R., Smorchkova, I., Heying, B., Block, T., Wojtowicz, M., Goorsky, M. Trans Tech Publications
2 国際会議録 InP HBT and HEMT Technology and Applications Gutierrez-Airken, A., Oki, A.K., Streit, D.C., Lai, R., Sawdai, D., Chen, Y C., Kaneshiro, E., Grundbache, R., Grossman, … Electrochemical Society	8 国際会議録 Diffraction and Topography Measurements of InP - based Heterostructure Devices Goorsky,M.S. Narosa Publishing House
3 国際会議録 InP Heterojunction Bipolar Transistor (HBT) Technology for Power Applications Kobayashi, K.W., Oki, A.K., Gutierrez-Aitken, A., Chin, P., Tran, L.T., Yang, L.-W., Sawdai, D., Kaneshiro, E., … Electrochemical Society	9 国際会議録 Influence of Dislocations on the Performance of High Indium Content In₀.₈₆Al₀.₁₄As/In₀.₈₆Ga₀.₁₄ As Heterojunction Bipolar Transistors R. Sandhu, C. Monier, A. Cavus, A. Noori, S. Hayashi, R. Hsing, T. P. Chin, M. Goorsky, A. Gutierrez Electrochemical Society
4 国際会議録 THE RELATIONSHIP BETWEEN InGaAs CHANNEL LAYER THICKNESS AND DEVICE PERFORMANCE IN HIGH ELECTRON MOBILITY TRANSISTORS Meshkinpour, M., Goorsky, M. S., Streit, D. C., Block, T., Wojtowicz, M., Rammohan, K., Rich, D. H. MRS - Materials Research Society	10 国際会議録 ELECTRICAL AND OPTICAL CHARACTERIZATION OF PSEUDOMORPHIC AlGaAs/InGaAs HIGH ELECTRON MOBILITY TRANSISTORS Winters, W. E., Yue, A. S., Streit, D. Materials Research Society
5 国際会議録 Degradation of InGaAs High Electron Mobility Transistors: The Role of Channel Composition and Thickness Meshkinpour, Marjohn, Goorsky, Mark S., Streit, Dwight C., Block, Thomas R., Wojtowicz, Mike MRS - Materials Research Society	11 国際会議録 60 GHz InP Power HEMTs with 15 jim x 25 jim Dry- Etched Through-Substrate Vias Grundbacher, R., Sabin, E., Nishimoto, M., Chin, T.P., Elmadjian, R., Chen, Y.C., Medvedev, V., Lai, R., Yamauchi, D., … Electrochemical Society
6 国際会議録 STRAIN RELAXATION IN EPITAXIAL HETEROSTRUCTURES: SENSITIVITY OF HIGH RESOLUTION X-RAY DIFFRACTION Goorsky, M.S., Horng, S.T., Stiffler, S.R., Stanis, C.S. Materials Research Society	12 国際会議録 Contactless Evaluation of the Common-Emitter Current gain Factor in GaAlAs/GaAs HBTs from the Photovoltaic Effect Observed in Contactless Electroreflectance and … Pollak, F.H., Gavrilenko, V.I., Krystek, W., Freeouf, J.L., Streit, D.C., Wojtowicz, M. Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12