High-Density Plasma Etching of Group-III Nitride Films for Device Application | 東京工業大学附属図書館文献データベース

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High-Density Plasma Etching of Group-III Nitride Films for Device Application

著者名:

さらに 5 件

掲載資料名:

Proceedings of the State-of-the-Art Program on Compound Semiconductors (SOTAPOCs XXX)

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

99-4

発行年:

1999

開始ページ:

25

終了ページ:

39

総ページ数:

15

出版情報:

Pennington, N. J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772266 [1566772265]

言語:

英語

請求記号:

E23400/99-4

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013934
シリーズID:	PA00000028
会議名:	Meeting of the Electrochemical Society
回次:	195th
会議開催地:	Seattle, WA, USA
会議開催年:	1999.05.02-1999.05.07

類似資料:

1 国際会議録 High-density plasma-induced etch damage of GaN Shul, R.J., Zhang, L., Baca, A.G., Willison, C.G., Han, J., Pearton, S.J., Ren, F., Zolper, J.C., Lester, L.F. Materials Research Society	7 国際会議録 High density plasma damage induced in n-GaN schottky diodes using Cl2/Ar discharges Zhang, A. P., Dang, G., Ren, F., Cao, X. A., Cho, H., Lambers, E. S., Pearton, S. J., Shul, R. J., Zhang, L., Baca, A. … MRS-Materials Research Society
2 国際会議録 Group-III Nitride Etch Selectivity in BCl3/Cl2 ICP Plasmas Shul, R. J., Zhang, L., Willison, C. G., Han, J., Pearton, S. J., Hong, J., Abernathy, C. R., Lester, L. F. MRS - Materials Research Society	8 国際会議録 Selective Etching of Wide-Bandgap Nitrides Shul, R. J., Willison, C. G., Bridges, M. M., Han, J., Lee, J. W., Pearton, S. J., Abernathy, C. R., MacKenzie, J. D., … MRS - Materials Research Society
3 国際会議録 Inductively Coupled High-Density Plasma-Induced Etch Damage Of GaN MESFETs Shul, Randy J., Zhang, L., Baca, A.G., Willison, Christi G., Hans, J., Pearton, S.J., Lee, K.P., Ren, F. Materials Research Society	9 国際会議録 Current Transport in W and Wsix Ohmic Contacts to InGaN and InN Vartuli, C. B., Pearton, S. J., Abernathy, C. R., MacKenizie, J. D., Lovejoy, M. L., Shul, R. J., Zolper, J. C., Baca, … MRS - Materials Research Society
4 国際会議録 GaN Etching in BCl3/Cl2 Plasmas Shul, R. J., Ashby, C. I. H., Willison, C. G., Zhang, L., Han, J., Bridges, M. M., Pearton, S. J., Lee, J. W., Lester, … MRS - Materials Research Society	10 国際会議録 GaN Device Processing Pearton, S. J., Ren, F., Zolper, J. C., Shul, R. J. MRS - Materials Research Society
5 国際会議録 Fabrication and characterization of GaN junction field effect transistors Zhang, L., Lester, L. F., Baca, A. G., Shul, R. J., Chang, P. C., Willison, C. G., Mishra, U. K., DenBaars, S. P., … MRS-Materials Research Society	11 国際会議録 III-Nitride ion implantation and device processing Zolper, J.C., Shul, R.J., Baca, A.G., Pearton, S.J., Abernathy, C.R., Wilson, R.G., Stall, R.A., Shur, M. Electrochemical Society
6 国際会議録 The Role of Plasma Chemistry and Ion Density in Dry Etching of Nitrides Vartuli, C.B., Pearton, S.J., Abernathy, C.R., Shul, R.J., Ren, F. Electrochemical Society	12 国際会議録 Hydrogenation and Defect Creation in GaAs-Based Devices During High-Density Plasma Processing Maeda, T., Lee, J. W., Abernathy, C. R., Pearton, S. J., Ren, F., Constantine, C., Shul, R. J. MRS - Materials Research Society

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