Silicon-On-Sapphire Material and Device Properties at High and Low Temperature

Silicon-On-Sapphire Material and Device Properties at High and Low Temperature

著者名:

Munteanu, D ( (LPCS/ENSERG) )
Cristoloveanu, S ( (LPCS/ENSERG) )
Lagnado, I ( (SPAWAR System Center, San Diego) )
de Ia Houssaye, P ( (SPAWAR System Center, San Diego) )

掲載資料名:

Proceedings of the Ninth International Symposium on Silicon-on-Insulator Technology and Devices

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

99-3

発行年:

1999

開始ページ:

361

終了ページ:

366

総ページ数:

6

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772259 [1566772257]

言語:

英語

請求記号:

E23400/99-3

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013933
シリーズID:	PA00000028
会議名:	International Symposium on Silicon-on-Insulator Technology and Devices ; Meeting of the Electrochemical Society
回次:	9th ; 195th
会議開催地:	Seattle, WA, USA
会議開催年:	1999.05.02-1999.05.07

類似資料:

1 国際会議録 TFSOS: Quo Vadis Lagnado, I., de Ia Houssaye, P. Electrochemical Society	7 国際会議録 *ELECTRICAL EVALUATION OF SIMOX MATERIAL AND INTEGRATED DEVICES Cristoloveanu, S. Materials Research Society
2 国際会議録 Silicon-On-Sapphire Technology: QUO VADIS II. A Competitive Alternative for RF Systems Lagnado, I., de Ia Houssaye, P.R., Koester, S.J., Hammond, R., Chu, J.O., Ott, J.A., Mooney, P.M., Perraud, L., Jenkins, … Electrochemical Society	8 国際会議録 Analysis of SiGe FET Device Structures on Silicon-on-Sapphire Substrates by X-ray Diffraction Mooney, P. M., Chu, J. O., Ott, J. A., Jordan-Sweet, J. L., Dubbelday, W. B., Kavanagh, K. L., Lagnado, I., Meyerson, B. … MRS - Materials Research Society
3 国際会議録 Influence of Nitrogen or Argon Anneals on the Properties of SIMOX Wafers and Devices Cristoloveanu, S., Ionescu, A., Wetteroth, T., Shin, H., Munteanu, D., Gentil, P., Hong, S., Wilson, S. R. MRS - Materials Research Society	9 国際会議録 Performance of Double-Gate SOI nMOSFETs at Low Temperature Vandooren, A., Cristoloveanu, S., Colinge, J.P., Flandre, D. Electrochemical Society
4 国際会議録 Influence of the annealing duration on the interface roughness and electrical properties of low-dose SIMOX wafers Munteanu, D., Guilhalmenc, C., Cristoloveanu, S., Moriceau, H., Cartier, A.M., Aspar, B. Electrochemical Society	10 国際会議録 Critical issues in SiGe on thin film silicon on sapphire for high performance room temperature CMOS technology Dubbelday, W B, On, J, Lagnado, I, Kavanagh, K, Walker, H, Chu, J, Meyerson, B Electrochemical Society
5 国際会議録 Operation of Silicon-Germanium CMOS on Sapphire Technology at Cryogenic Temperatures Mathew, S.J., Dubbelday, W.B., Cressler, J.D., Ott, J., Chu, J.O., Meyerson, B.S., Kavanagh, K.L., Lagnado, I. Electrochemical Society	11 国際会議録 Evaluation and Comparison of Various Silicon-On-Sapphire (SOS) Materials using the Pseudo-MOSFET Technique Hefyene, N., Cristoloveanu, S., Ghibaudo, G., Matsui, M., Yasujima, A. Electrochemical Society
6 国際会議録 Electrical Properties of Metal-Buried Oxide-Silicon Structures Fabricated by Low Dose SIMOX Process Dimitrakis, P., Papaioannou, G., Cristoloveanu, S. Electrochemical Society	12 国際会議録 Nanophotonic applications for silicon-on-insulator (SOI) de la Houssaye, P.R., Russell, S.D., Shimabukuro, R.L. SPIE - The International Society of Optical Engineering

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