Ground-Plane Concept for Reduction of Short-Channel Effects in Fully-Depleted SOT Devices

Ground-Plane Concept for Reduction of Short-Channel Effects in Fully-Depleted SOT Devices

著者名:

Ernst, T ( (ENSERG) )
Cristoloveanu, S ( (ENSERG) )

掲載資料名:

Proceedings of the Ninth International Symposium on Silicon-on-Insulator Technology and Devices

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

99-3

発行年:

1999

開始ページ:

329

終了ページ:

334

総ページ数:

6

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772259 [1566772257]

言語:

英語

請求記号:

E23400/99-3

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013933
シリーズID:	PA00000028
会議名:	International Symposium on Silicon-on-Insulator Technology and Devices ; Meeting of the Electrochemical Society
回次:	9th ; 195th
会議開催地:	Seattle, WA, USA
会議開催年:	1999.05.02-1999.05.07

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