Interdependence and Significance of Hot Carrier Stress (HCS) and Gate Induced (GIDL) Drain Leakage Current in BC SOT pMOSFETs

Interdependence and Significance of Hot Carrier Stress (HCS) and Gate Induced (GIDL) Drain Leakage Current in BC SOT pMOSFETs

著者名:

Zhao, X ( (George Mason University) )
Ioannou, D ( (George Mason University) )
Jenkins, W ( (Naval Research Laboratory) )
Hughes, H ( (Naval Research Laboratory) )
Liu, S T ( (Honeywell SSEC) )

掲載資料名:

Proceedings of the Ninth International Symposium on Silicon-on-Insulator Technology and Devices

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

99-3

発行年:

1999

開始ページ:

272

終了ページ:

275

総ページ数:

4

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772259 [1566772257]

言語:

英語

請求記号:

E23400/99-3

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013933
シリーズID:	PA00000028
会議名:	International Symposium on Silicon-on-Insulator Technology and Devices ; Meeting of the Electrochemical Society
回次:	9th ; 195th
会議開催地:	Seattle, WA, USA
会議開催年:	1999.05.02-1999.05.07

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