Highly Suppressed Threshold Voltage Roll-off Characteristics of the 4 nm-Thick SOI n- MOSFETs in the 40-135 nm Gate Length Regime
- 著者名:
Suzuki, E ( (Electrotech Laboratory) ) Ishii, K ( (Electrotech Laboratory) ) Kanemaru, S ( (Electrotech Laboratory) ) Maeda, T ( (Electrotech Laboratory) ) Tautaumi, T ( (Electrotech Laboratory) ) Nagai, K ( (Electrotech Laboratory) ) Sekigawa, T ( (Electrotech Laboratory) ) Hiroshima, H ( (Electrotech Laboratory) ) - 掲載資料名:
- Proceedings of the Ninth International Symposium on Silicon-on-Insulator Technology and Devices
- シリーズ名:
- Electrochemical Society Proceedings Series
- シリーズ巻号:
- 99-3
- 発行年:
- 1999
- 開始ページ:
- 260
- 終了ページ:
- 265
- 総ページ数:
- 6
- 出版情報:
- Pennington, NJ: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566772259 [1566772257]
- 言語:
- 英語
- 請求記号:
- E23400/99-3
- 資料種別:
- 国際会議録
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