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Extraction of the Oxide Charges at the Buried Oxide/Silicon Substrate Interface in Accumulation-Mode SOI pMOSFETs at Low Temperatures

著者名:
掲載資料名:
Proceedings of the Ninth International Symposium on Silicon-on-Insulator Technology and Devices
シリーズ名:
Electrochemical Society Proceedings Series
シリーズ巻号:
99-3
発行年:
1999
開始ページ:
201
終了ページ:
206
総ページ数:
6
出版情報:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566772259 [1566772257]
言語:
英語
請求記号:
E23400/99-3
資料種別:
国際会議録

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