High Performance Silicon Wafer with Wide Grown-in Void Free Zone and High Density Internal Gettering Site Achieved via Rapid Crystal Growth with Nitrogen Doping and High Temperature Hydrogen and/or Argon Annealing

High Performance Silicon Wafer with Wide Grown-in Void Free Zone and High Density Internal Gettering Site Achieved via Rapid Crystal Growth with Nitrogen Doping and High Temperature Hydrogen and/or Argon Annealing

著者名:

掲載資料名:

Proceedings of the Third International Symposium on Defects in Silicon

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

99-1

発行年:

1999

開始ページ:

456

終了ページ:

467

総ページ数:

12

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772235 [1566772230]

言語:

英語

請求記号:

E23400/99-1

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013931
シリーズID:	PA00000028
会議名:	International Symposium on Defects in Silicon ; Meeting of the Electrochemical Society
回次:	3rd ; 195th
会議開催地:	Seattle, WA, USA
会議開催年:	1999.05.02-1999.05.07

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