Effect of Heavy Boron Doping on Oxygen Precipitation in Czochralski Silicon Substrates of Epitaxial Wafers

Effect of Heavy Boron Doping on Oxygen Precipitation in Czochralski Silicon Substrates of Epitaxial Wafers

著者名:

Sucoka, K.

掲載資料名:

Proceedings of the Third International Symposium on Defects in Silicon

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

99-1

発行年:

1999

開始ページ:

253

終了ページ:

267

総ページ数:

15

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772235 [1566772230]

言語:

英語

請求記号:

E23400/99-1

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013931
シリーズID:	PA00000028
会議名:	International Symposium on Defects in Silicon ; Meeting of the Electrochemical Society
回次:	3rd ; 195th
会議開催地:	Seattle, WA, USA
会議開催年:	1999.05.02-1999.05.07

類似資料:

1 国際会議録 Oxygen Precipitation Behavior and its Optimum Condition for Internal Gettenng and Mechanical Strength in Epitaxial and Polished Silicon Wafers * Sueoka, K., Akatsuka, M., Onno, T., Asayama, E., Koike, Y., Adachi, N., Sadamitsu, S., Katahama, H. Electrochemical Society	7 国際会議録 COMPUTER SIMULATION FOR MORPHOLOGY, SIZE AND DENSITY OF OXIDE PRECIPITATES IN CZOCHRALSKI SILICON Sueoka, K., Akatsuka, M., Okui, M., Katahama, H. Electrochemical Society
2 国際会議録 Oxygen Precipitation Behavior and its Optimum Condition for Internal Gettering and Mechanical Strength in Epitaxial and Polished Silicon Wafers Sueoka,K., Akatsuka,M., Onno,T., Asayama,E., Koike,Y., Adachi,N., Sadamitsu,S., Katahama,H. Electrochemical Society, SPIE-The International Society for Optical Engineering	8 国際会議録 INFLUENCE OF HEAVY BORON DOPING ON OXYGEN PRECIPITATION CHARACTERISTICS OF CZOCHRALSKI SILICON CRYSTALS AND ITS COMPUTER SIMULATION Takeno, H., Aihara, K., Hayamizu, Y., Kitagawara, Y. Electrochemical Society
3 国際会議録 EFFECT OF HEAVY BORON DOPING ON OXIDE PRECIPITATE GROWTH IN CZOCHRALSKI SILICON Ono, T., Asayama, E., Horie, H., Hourai, M., Sueoka, K., Tsuya, H., Rozgonyi, G.A. Electrochemical Society	9 国際会議録 Defect Formation Behaviors in Heavily Doped Czochralski Silicon W. Sugimura, T. Ono, S. Umeno, M. Hourai, K. Sueoka Electrochemical Society
4 国際会議録 RADIAL DISTRIBUTION OF THERMALLY-INDUCED DEFECTS IN HEAVILY BORON-DOPED SILICON WAFERS Asayama, E., Ono, T., Takeshita, M., Hourai, M., Sano, M., Tsuya, H. Electrochemical Society	10 国際会議録 CALCULATION OF SLIP LENGTH IN 300 mm SILICON WAFERS DURING THERMAL PROCESSES Akatsuka, M., Sueoka, K., Katahama, H., Adachi, N. Electrochemical Society
5 国際会議録 Oxygen Precipitation Behaviour in 300 mm Polished Czochralski Silicon Wafers Ono, T., Rozgonyi, G.A., Au, C., Messina, T., Goodall, R.K., Huff, H.R. Electrochemical Society	11 国際会議録 Oxygen Precipitation in Lightly and Heavily Doped Czochralski Silicon K. Sueoka Electrochemical Society
6 国際会議録 COMPUTER SIMULATION FOR MORPHOLOGY, SIZE AND DENSITY OF OXIDE PRECIPITATES IN CZOCHRALSKI SILICON Sueoka, K., Akatsuka, M., Okui, M., Katahama, H. Electrochemical Society	12 国際会議録 Photoluminescence of Ring-Distribution of Oxygen Precipitates in Czochralski Silicon Terashima,K., Ikarashi,T., Ono,H., Tajima,M. Trans Tech Publications

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